Taiwan semiconductor manufacturing company, ltd. (20240379874). TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STRUCTURE simplified abstract
Contents
TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chao-Ching Cheng of Hsinchu City (TW)
Jui-Chien Huang of Hsinchu City (TW)
Shih Hao Wang of Taipei City (TW)
TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379874 titled 'TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STRUCTURE
The abstract of the patent application describes a transistor with a gate structure, a spacer surrounding the gate structure, a channel layer made of a two-dimensional material, and a source/drain contact separated from the gate structure by the spacer.
- The transistor includes a gate structure and a spacer surrounding it.
- The channel layer is made of a two-dimensional material.
- The source/drain contact is laterally separated from the gate structure by the spacer.
- The source/drain contact is laterally coupled to the channel layer.
Potential Applications: - This technology could be used in the development of advanced electronic devices. - It may find applications in the semiconductor industry for improved performance.
Problems Solved: - Enhances the efficiency and performance of transistors. - Provides a more compact and reliable transistor design.
Benefits: - Improved functionality and performance of electronic devices. - Increased efficiency and reliability in semiconductor applications.
Commercial Applications: Title: Advanced Transistor Technology for Enhanced Electronic Devices This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about Transistor Technology: 1. How does the use of a two-dimensional material in the channel layer impact the performance of the transistor? 2. What are the potential challenges in implementing this advanced transistor design in mass production?
Frequently Updated Research: Stay updated on the latest advancements in two-dimensional materials research for potential improvements in transistor technology.
Original Abstract Submitted
a transistor includes a gate structure, a spacer laterally surrounding the gate structure. a channel layer underlying the gate structure and comprising a two-dimensional (2d) material, and a source/drain contact laterally separated from the gate structure by the spacer and laterally coupled to the channel layer.
