Taiwan semiconductor manufacturing company, ltd. (20240379871). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Marcus Johannes Henricus Van Dal of Hsinchu (TW)

Gerben Doornbos of Hsinchu (TW)

Georgios Vellianitis of Hsinchu (TW)

Mauricio Manfrini of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379871 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor device described in the abstract includes a channel layer, source/drain contacts, and first barrier liners. The channel layer is made of an oxide semiconductor material, while the source/drain contacts are in electrical contact with the channel layer. The first barrier liners surround the source/drain contacts and contain a hydrogen barrier material to prevent hydrogen diffusion to the channel layer.

• The device features a channel layer composed of an oxide semiconductor material.
• Source/drain contacts are in direct electrical contact with the channel layer.
• First barrier liners surrounding the source/drain contacts include a hydrogen barrier material to prevent hydrogen diffusion.
• The technology aims to enhance the performance and reliability of semiconductor devices by preventing hydrogen-related issues.

Potential Applications: This technology can be applied in various semiconductor devices such as transistors, sensors, and memory devices.

Problems Solved: The technology addresses issues related to hydrogen diffusion in semiconductor devices, which can impact their performance and reliability.

Benefits: Improved performance and reliability of semiconductor devices, enhanced durability, and reduced maintenance costs.

Commercial Applications: This technology can be utilized in the manufacturing of advanced electronic devices, leading to more efficient and reliable products in the market.

Questions about the Technology: 1. How does the use of a hydrogen barrier material in the first barrier liners benefit the semiconductor device?

  - The hydrogen barrier material prevents hydrogen diffusion, which can improve the device's performance and reliability.

2. What are the potential drawbacks of using an oxide semiconductor material in the channel layer?

  - While oxide semiconductor materials offer certain advantages, they may have limitations in terms of speed or power efficiency compared to other materials.

Original Abstract Submitted

a semiconductor device includes a channel layer, source/drain contacts, and first barrier liners. the channel layer includes an oxide semiconductor material. the source/drain contacts are disposed in electrical contact with the channel layer. the first barrier liners surround the source/drain contacts, respectively, and include a hydrogen barrier material so as to prevent hydrogen from diffusion through the first barrier liners to the channel layer.