Taiwan semiconductor manufacturing company, ltd. (20240379870). THIN FILM TRANSISTOR STRUCTURE simplified abstract

THIN FILM TRANSISTOR STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wu-Wei Tsai of Taoyuan City (TW)

Hai-Ching Chen of Hsinchu City (TW)

Po-Ting Lin of Taichung City (TW)

Yan-Yi Chen of Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

Tzer-Min Shen of Hsinchu City (TW)

Yen-Tien Tung of Hsinchu (TW)

THIN FILM TRANSISTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379870 titled 'THIN FILM TRANSISTOR STRUCTURE

The abstract of the patent application describes a solution to the problem of providing transistors with a specified threshold voltage within a broad range without creating leakage, capacitance, or process compatibility issues. This is achieved by introducing a buried layer of a second dielectric composition into the gate dielectric of a first dielectric composition.

• The second dielectric composition is selected to create dipoles around the interface of the two dielectrics, causing a shift in the threshold voltage.
• The buried layer has a higher dielectric constant than the gate dielectric, is thinner, and is located near the channel.

Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronics industry

Problems Solved: - Providing transistors with specified threshold voltages - Avoiding leakage, capacitance, and process compatibility issues

Benefits: - Enhanced control over threshold voltages - Improved transistor performance - Increased flexibility in manufacturing processes

Commercial Applications: - Customized semiconductor production for various electronic devices - Optimization of transistor performance in integrated circuits - Potential for advancements in electronics industry

Questions about the technology: 1. How does the introduction of a buried layer of a second dielectric composition impact the threshold voltage of transistors? 2. What are the specific advantages of using dipoles to control the threshold voltage in semiconductor devices?

Frequently Updated Research: - Ongoing studies on the optimization of dielectric compositions in semiconductor manufacturing - Research on the impact of dipoles on transistor performance and reliability

Original Abstract Submitted

the problem of providing transistors that can be manufactured to any specified threshold voltage withing a broad range of threshold voltages without creating leakage, capacitance, or process compatibility issues is solved by introducing a buried layer of a second dielectric composition into a gate dielectric of a first dielectric composition. the second dielectric composition is selected relative to the first dielectric composition so that dipoles form around the interface of the two dielectrics. the dipoles create an electric field that causes a shift in the threshold voltage. the buried layer has a higher dielectric constant than the gate dielectric, is thinner than the gate dielectric, and is proximate the channel.