Taiwan semiconductor manufacturing company, ltd. (20240379861). SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES simplified abstract

SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu City (TW)

Cheng-Han Lee of New Taipei City (TW)

SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379861 titled 'SOURCE/DRAIN FEATURES OF MULTI-GATE DEVICES

The abstract of this patent application describes a method for forming semiconductor structures, specifically fin-shaped structures with multiple channel layers interleaved by sacrificial layers.

• The method involves recessing the source/drain region of the fin-shaped structure to create a source/drain recess that extends into the substrate.
• Inner spacer recesses are selectively formed by partially recessing the sidewalls of the sacrificial layers, followed by the formation of inner spacers in these recesses.
• A buffer semiconductor layer is selectively formed on the exposed portion of the substrate, and a first epitaxial layer is deposited on the sidewalls of the channel layers and the buffer semiconductor layer.
• Finally, a second epitaxial layer is deposited over the first epitaxial layer and the inner spacers.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices such as transistors. - It can improve the performance and efficiency of electronic devices by enhancing the structure of the semiconductor components.

Problems Solved: - This method addresses the need for more precise and controlled formation of semiconductor structures. - It helps in achieving higher levels of integration and performance in semiconductor devices.

Benefits: - Enhanced precision and control in the formation of semiconductor structures. - Improved performance and efficiency of electronic devices. - Increased levels of integration in semiconductor components.

Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for the production of advanced electronic devices. - It can be utilized by semiconductor manufacturers to enhance the quality and performance of their products, leading to a competitive edge in the market.

Questions about the technology: 1. How does the formation of inner spacers contribute to the overall structure of the semiconductor device? - The inner spacers help in defining the channel region of the device and provide additional control over the electrical properties.

2. What are the advantages of selectively depositing the first epitaxial layer on specific surfaces of the semiconductor structure? - Selective deposition allows for precise control over the growth of the epitaxial layer, ensuring uniformity and quality in the final structure.

Original Abstract Submitted

methods and semiconductor structures are provided. a method according to the present disclosure includes forming, over a substrate, a fin-shaped structure that includes a plurality of channel layers interleaved by a plurality of sacrificial layers, recessing a source/drain region of the fin-shaped structure to form a source/drain recess that extends into the substrate and exposes a portion of the substrate, selectively and partially recessing sidewalls of the plurality of sacrificial layers to form inner spacer recesses, forming inner spacers in the inner spacer recesses, selectively forming a buffer semiconductor layer on the exposed portion of the substrate, selectively depositing a first epitaxial layer on sidewalls of the plurality of channel layer and the buffer semiconductor layer such that a top surface of the buffer semiconductor layer is completely covered by the first epitaxial layer, and depositing a second epitaxial layer over the first epitaxial layer and the inner spacers.