Taiwan semiconductor manufacturing company, ltd. (20240379860). OVERHANGING SOURCE/DRAIN CONTACT simplified abstract

OVERHANGING SOURCE/DRAIN CONTACT

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chung-Hao Cai of Hsinchu (TW)

Yen-Jun Huang of Hsinchu (TW)

Ting Fang of Hsinchu (TW)

Chia-Hsien Yao of Hsinchu (TW)

Chen-Ming Lee of Taoyuan County (TW)

Fu-Kai Yang of Hsinchu City (TW)

Mei-Yun Wang of Hsin-Chu (TW)

OVERHANGING SOURCE/DRAIN CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379860 titled 'OVERHANGING SOURCE/DRAIN CONTACT

Simplified Explanation: The patent application describes a semiconductor structure with multiple fin structures, source/drain features, dielectric features, and contact structures.

• The semiconductor structure includes first and second fin structures on a substrate.
• Source/drain features are placed over the fin structures.
• Dielectric features are positioned over the source/drain features.
• Contact structures are formed over the source/drain features, electrically coupled to the second source/drain feature, and separated from the first source/drain feature by the dielectric feature.

Key Features and Innovation:

• Integration of multiple fin structures in a semiconductor design.
• Use of dielectric features to separate and protect source/drain features.
• Efficient electrical coupling through contact structures.

Potential Applications: This technology can be applied in the development of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved:

• Enhanced performance and reliability of semiconductor structures.
• Improved electrical connectivity and isolation of components.

Benefits:

• Increased efficiency in semiconductor device operation.
• Enhanced durability and longevity of the structures.
• Potential for higher speeds and lower power consumption in electronic devices.

Commercial Applications: The technology can be utilized in the manufacturing of smartphones, computers, and other electronic devices requiring high-speed processing and energy efficiency.

Questions about Semiconductor Structures: 1. How does the use of multiple fin structures impact the performance of semiconductor devices? 2. What are the advantages of using dielectric features to separate source/drain features in semiconductor structures?

Original Abstract Submitted

semiconductor structures and methods are provided. a semiconductor structure according to the present disclosure includes a first fin structure and a second fin structure over a substrate, a first source/drain feature disposed over the first fin structure and a second source/drain feature disposed over the second fin structure, a dielectric feature disposed over the first source/drain feature, and a contact structure formed over the first source/drain feature and the second source/drain feature. the contact structure is electrically coupled to the second source/drain feature and is separated from the first source/drain feature by the dielectric feature.