Taiwan semiconductor manufacturing company, ltd. (20240379859). Device Structure with Reduced Leakage Current simplified abstract

Device Structure with Reduced Leakage Current

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

Device Structure with Reduced Leakage Current - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379859 titled 'Device Structure with Reduced Leakage Current

The semiconductor device described in the abstract includes a fin on a substrate with source/drain features, a stack of semiconductor layers, and a gate structure.

• The device has a fin on a substrate with source/drain features.
• A stack of semiconductor layers is located between the source/drain features on the fin.
• A gate structure is positioned over the stack of semiconductor layers.
• A dielectric layer isolates the source/drain feature from the fin along a vertical direction.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of electronic devices.

Problems Solved: - Enhances the functionality and performance of semiconductor devices. - Provides better isolation and control of electrical signals.

Benefits: - Improved performance and efficiency of electronic devices. - Enhanced control and isolation of electrical signals.

Commercial Applications: - This technology can be applied in the production of high-performance electronic devices. - It has potential uses in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the dielectric layer improve the performance of the semiconductor device? 2. What are the specific advantages of having a stack of semiconductor layers in this device?

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor technology to enhance the performance and efficiency of electronic devices.

Original Abstract Submitted

a semiconductor device includes a fin on a substrate extending along a fin direction, a first and a second source/drain features on the fin. the semiconductor device also includes a stack of semiconductor layers over a first portion of the fin and between the first source/drain feature and the second source/drain feature. the semiconductor device further includes a gate structure over the stack of semiconductor layers. the gate structure extends along a gate direction perpendicular to the fin direction. moreover, the gate structure engages with the stack of semiconductor layers. the semiconductor device includes a dielectric layer interposing between the first source/drain feature and the fin along a vertical direction, where the vertical direction is perpendicular to the fin direction and to the gate direction. the dielectric layer interfaces with the first portion of the fin and isolates the first source/drain feature from the first portion of the fin.