Taiwan semiconductor manufacturing company, ltd. (20240379858). PASSIVATION STRUCTURE FOR A THIN FILM TRANSISTOR simplified abstract
Contents
PASSIVATION STRUCTURE FOR A THIN FILM TRANSISTOR
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wu-Wei Tsai of Taoyuan City (TW)
Hai-Ching Chen of Hsinchu City (TW)
PASSIVATION STRUCTURE FOR A THIN FILM TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379858 titled 'PASSIVATION STRUCTURE FOR A THIN FILM TRANSISTOR
The patent application describes a device with an active layer over a substrate, a gate electrode, a gate dielectric layer, a passivation structure, and source and drain contacts on the active layer, with an upper portion of the passivation structure made of silicon carbide.
- Device with active layer, gate electrode, gate dielectric layer, passivation structure, and source/drain contacts
- Passivation structure includes silicon carbide
- Designed for specific electronic applications
- Utilizes advanced materials for improved performance
- Potential for increased efficiency and durability in electronic devices
Potential Applications: The technology could be used in various electronic devices such as transistors, sensors, and integrated circuits where high performance and reliability are crucial.
Problems Solved: The technology addresses issues related to device performance, reliability, and durability by utilizing advanced materials like silicon carbide in the passivation structure.
Benefits: The use of silicon carbide in the passivation structure can lead to improved device efficiency, reliability, and longevity, making it ideal for demanding electronic applications.
Commercial Applications: The technology could have significant implications in the semiconductor industry, particularly in the development of high-performance electronic devices for various applications.
Questions about the Technology: 1. How does the use of silicon carbide in the passivation structure improve device performance? 2. What specific electronic applications could benefit the most from this technology?
Frequently Updated Research: Ongoing research in the field of advanced materials and semiconductor devices may provide further insights into the potential applications and benefits of using silicon carbide in electronic devices.
Original Abstract Submitted
in some embodiments, the present disclosure relates to a device. the device includes an active layer arranged over a substrate. a gate electrode is arranged on a first side of the active layer and spaced apart from the active layer by a gate dielectric layer. a passivation structure is arranged on the active layer. a source contact extends through the passivation structure to contact the active layer and a drain contact extends through the passivation structure to contact the active layer. an upper portion of the passivation structure includes silicon carbide.
