Taiwan semiconductor manufacturing company, ltd. (20240379855). CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE simplified abstract

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Zhi-Chang Lin of Hsinchu County (TW)

Shih-Cheng Chen of New Taipei City (TW)

Jung-Hung Chang of Hsinchu (TW)

Chien Ning Yao of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379855 titled 'CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

The semiconductor device described in the abstract consists of multiple layers and features that enable its functionality.

• The device includes a stack of first channel members and a stack of second channel members, with the second stack placed directly over the first stack.
• A bottom source/drain feature is in contact with the first channel members, while a top source/drain feature is in contact with the second channel members.
• A separation layer is positioned over the bottom source/drain feature, separating it from the top source/drain feature.
• A frontside contact extends through the top source/drain feature and the separation layer to connect electrically to the bottom source/drain feature.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be applied in the development of high-performance computing systems, mobile devices, and other electronic gadgets.

Problems Solved: - This innovation addresses the need for efficient and compact semiconductor devices with improved performance and functionality. - It solves the challenge of integrating multiple layers and features in a semiconductor device while maintaining electrical connectivity.

Benefits: - Enhanced performance and efficiency in semiconductor devices. - Improved reliability and functionality in electronic systems. - Compact design for space-saving in electronic devices.

Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce cutting-edge electronic components for consumer electronics, automotive systems, and industrial applications.

Questions about the technology: 1. How does the placement of the second channel members over the first channel members impact the performance of the semiconductor device? 2. What are the specific advantages of using a separation layer in this semiconductor device design?

Original Abstract Submitted

a semiconductor device according to the present disclosure includes a stack of first channel members, a stack of second channel members disposed directly over the stack of first channel members, a bottom source/drain feature in contact with the stack of the first channel members, a separation layer disposed over the bottom source/drain feature, a top source/drain feature in contact with the stack of second channel members and disposed over the separation layer, and a frontside contact that extends through the top source/drain feature and the separation layer to be electrically coupled to the bottom source/drain feature.