Taiwan semiconductor manufacturing company, ltd. (20240379853). FINFET DEVICE AND METHOD OF FORMING SAME simplified abstract

FINFET DEVICE AND METHOD OF FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

Shih-Chieh Chang of Taipei (TW)

FINFET DEVICE AND METHOD OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379853 titled 'FINFET DEVICE AND METHOD OF FORMING SAME

Simplified Explanation: The patent application describes a method of forming a finFET device by reshaping semiconductor strips to create fins that extend away from isolation regions on a substrate.

• Key Features and Innovation:

   - Formation of semiconductor strips over a substrate
   - Creation of isolation regions between adjacent semiconductor strips
   - Reshaping of semiconductor strips to form fins
   - Fins extending away from isolation regions

• Potential Applications:

The technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications such as high-performance computing, mobile devices, and communication systems.

• Problems Solved:

The method addresses the need for improved performance and efficiency in semiconductor devices by enhancing control over the flow of current through the fins.

• Benefits:

   - Increased speed and efficiency of semiconductor devices
   - Enhanced control over current flow
   - Potential for higher performance in electronic applications

• Commercial Applications:

The technology has potential commercial applications in the semiconductor industry for the development of next-generation electronic devices with improved performance and efficiency.

• Prior Art:

Readers can explore prior art related to finFET devices and semiconductor manufacturing processes to gain a deeper understanding of the technological advancements in the field.

• Frequently Updated Research:

Stay informed about the latest research and developments in finFET technology and semiconductor manufacturing processes to keep up with industry trends and innovations.

Questions about finFET Technology:

1. What are the key advantages of using finFET technology in semiconductor devices?

  - FinFET technology offers improved control over current leakage and enhanced performance compared to traditional planar transistors.

2. How does the reshaping of semiconductor strips to form fins contribute to the efficiency of finFET devices?

  - Reshaping the semiconductor strips into fins increases the surface area for current flow, allowing for better control and higher performance in semiconductor devices.

Original Abstract Submitted

a finfet device and a method of forming the same are provided. the method includes forming semiconductor strips over a substrate. isolation regions are formed over the substrate and between adjacent semiconductor strips. a first recess process is performed on the isolation regions to expose first portions of the semiconductor strips. the first portions of the semiconductor strips are reshaped to form reshaped first portions of the semiconductor strips. a second recess process is performed on the isolation regions to expose second portions of the semiconductor strips below the reshaped first portions of the semiconductor strips. the second portions of the semiconductor strips are reshaped to form reshaped second portions of the semiconductor strips. the reshaped first portions of the semiconductor strips and the reshaped second portions of the semiconductor strips form fins. the fins extend away from topmost surfaces of the isolation regions.