Taiwan semiconductor manufacturing company, ltd. (20240379852). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jia-Chuan You of Taoyuan City (TW)
Chia-Hao Chang of Hsinchu City (TW)
Tien-Lu Lin of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chih-Hao Wang of Baoshan Township (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379852 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation: The semiconductor device structure described in the patent application includes a transistor on a substrate, with various layers and components that enhance its performance and functionality.
- The semiconductor device structure consists of a transistor on a substrate.
- A contact is electrically connected to a source/drain feature of the transistor.
- There is a first dielectric layer on the gate stack of the transistor.
- A second dielectric layer is present on the contact.
- A gate spacer layer separates the gate stack of the transistor and the contact.
- A contact liner is positioned between the gate spacer layer and the contact.
- The top of the contact liner is higher than the bottom surface of the second dielectric layer and lower than the top surface of the second dielectric layer.
Key Features and Innovation:
- Enhanced performance of the transistor through optimized layering and component placement.
- Improved electrical connectivity and insulation within the semiconductor device structure.
- Efficient utilization of space and materials for compact design.
Potential Applications:
- Semiconductor manufacturing industry for the production of advanced electronic devices.
- Integrated circuits and microprocessors for various electronic applications.
- Consumer electronics, telecommunications, and automotive industries.
Problems Solved:
- Addressing issues related to electrical connectivity and insulation in semiconductor devices.
- Optimizing the performance and functionality of transistors on substrates.
- Improving the overall efficiency and reliability of electronic devices.
Benefits:
- Enhanced performance and functionality of transistors.
- Improved electrical connectivity and insulation.
- Compact design for space-efficient electronic devices.
Commercial Applications: The semiconductor device structure described in the patent application has potential commercial applications in the semiconductor manufacturing industry for the production of advanced electronic devices. This innovation can also be utilized in integrated circuits, microprocessors, consumer electronics, telecommunications, and automotive industries, enhancing the performance and functionality of electronic devices.
Questions about Semiconductor Device Structure: 1. What are the key components of the semiconductor device structure described in the patent application? 2. How does the placement of the contact liner contribute to the overall performance of the transistor in the semiconductor device structure?
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device structure includes a transistor on a substrate, a contact electrically connected to a source/drain feature of the transistor, a first dielectric layer on a gate stack of the transistor, a second dielectric layer on the contact, a gate spacer layer between the gate stack of the transistor and the contact, and a contact liner between the gate spacer layer and the contact. a top of the contact liner is located higher than a bottom surface of the second dielectric layer and lower than a top surface of the second dielectric layer.
