Taiwan semiconductor manufacturing company, ltd. (20240379849). METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER simplified abstract
Contents
METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kai-Chieh Yang of Hsinchu (TW)
Wei Ju Lee of Kaohsiung City (TW)
Li-Yang Chuang of Hsinchu City (TW)
Pei-Yu Wang of Hsinchu City (TW)
Ching-Wei Tsai of Hsinchu City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379849 titled 'METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED SPACER
Simplified Explanation: The patent application describes a semiconductor device with a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), each with specific gate structures and spacers.
- PFET with first gate structure, first spacer, and unstrained spacer.
- NFET with second gate structure, first spacer, and strained spacer.
Key Features and Innovation:
- Semiconductor device with PFET and NFET for improved performance.
- Specific gate structures and spacers for each transistor type.
- Use of strained spacers to enhance transistor characteristics.
Potential Applications:
- Integrated circuits
- Electronics industry
- Semiconductor manufacturing
Problems Solved:
- Enhancing transistor performance
- Improving semiconductor device efficiency
Benefits:
- Higher performance
- Increased efficiency
- Enhanced functionality
Commercial Applications: The technology can be utilized in various commercial applications such as mobile devices, computers, and other electronic devices, leading to improved performance and efficiency in semiconductor devices.
Prior Art: Readers can explore prior art related to semiconductor device fabrication, gate structures, and transistor spacers in the field of semiconductor technology.
Frequently Updated Research: Stay updated on the latest research in semiconductor device fabrication, transistor design, and semiconductor materials to further enhance the performance and efficiency of semiconductor devices.
Questions about Semiconductor Device Technology: 1. What are the potential challenges in implementing strained spacers in semiconductor devices? 2. How does the use of specific gate structures contribute to the overall performance of the semiconductor device?
Original Abstract Submitted
a semiconductor device and a method of forming the same are provided. a semiconductor device according to an embodiment includes a p-type field effect transistor (pfet) and an n-type field effect transistor (nfet). the pfet includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. the net includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.
