Taiwan semiconductor manufacturing company, ltd. (20240379848). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wilman Tsai of Saratoga CA (US)

Ling-Yen Yeh of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379848 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The abstract describes a method of manufacturing a negative capacitance structure, involving the formation of a ferroelectric dielectric layer over a first conductive layer on a substrate, followed by the formation of a second conductive layer over the ferroelectric dielectric layer. The ferroelectric dielectric layer consists of an amorphous layer and crystals.

• The innovation involves the creation of a negative capacitance structure using a ferroelectric dielectric layer with both amorphous and crystalline components.
• This unique structure allows for improved performance and efficiency in electronic devices.
• By combining the amorphous and crystalline layers, the negative capacitance structure can achieve enhanced functionality.
• The method provides a novel approach to manufacturing negative capacitance structures, offering potential advancements in technology.

Potential Applications: This technology could be applied in various electronic devices such as memory storage, sensors, and energy harvesting systems.

Problems Solved: The innovation addresses the need for improved performance and efficiency in electronic devices by utilizing a unique ferroelectric dielectric layer structure.

Benefits: The negative capacitance structure offers enhanced functionality and efficiency, leading to improved performance in electronic devices.

Commercial Applications: This technology could have significant commercial implications in the semiconductor industry, particularly in the development of advanced electronic devices.

Questions about Negative Capacitance Structures: 1. How does the combination of amorphous and crystalline layers in the ferroelectric dielectric layer contribute to the performance of the negative capacitance structure? 2. What potential applications could benefit the most from the use of this innovative manufacturing method?

Frequently Updated Research: Researchers are continually exploring new ways to optimize negative capacitance structures for enhanced performance and efficiency in electronic devices.

Original Abstract Submitted

in a method of manufacturing a negative capacitance structure, a ferroelectric dielectric layer is formed over a first conductive layer disposed over a substrate, and a second conductive layer is formed over the ferroelectric dielectric layer. the ferroelectric dielectric layer includes an amorphous layer and crystals.