Taiwan semiconductor manufacturing company, ltd. (20240379847). Memory Array Channel Regions simplified abstract
Contents
Memory Array Channel Regions
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Kuo-Chang Chiang of Hsinchu (TW)
Hung-Chang Sun of Kaohsiung (TW)
Sheng-Chih Lai of Hsinchu (TW)
Memory Array Channel Regions - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379847 titled 'Memory Array Channel Regions
The abstract describes a memory cell with a ferroelectric material contacting a word line and an oxide semiconductor layer contacting a source line and a bit line, with the ferroelectric material positioned between the oxide semiconductor layer and the word line. The oxide semiconductor layer consists of a first region with a first concentration of a semiconductor element adjacent to the ferroelectric material, a second region with a second concentration of the semiconductor element adjacent to the source line, and a third region with a third concentration of the semiconductor element between the first and second regions.
- The memory cell includes a unique configuration with a ferroelectric material and an oxide semiconductor layer.
- The oxide semiconductor layer is divided into three regions with varying concentrations of the semiconductor element.
- The third region has a concentration greater than the second region and less than the first region.
- This design aims to optimize the performance and efficiency of the memory cell.
- The innovation potentially enhances the stability and reliability of data storage in electronic devices.
Potential Applications: - Memory storage in electronic devices - Semiconductor industry for data retention - Advanced computing systems
Problems Solved: - Improved data retention and stability in memory cells - Enhanced performance and efficiency in electronic devices
Benefits: - Increased reliability of data storage - Optimized memory cell performance - Potential for advancements in semiconductor technology
Commercial Applications: Title: Enhanced Memory Cell Technology for Improved Data Storage This technology could be utilized in various electronic devices such as smartphones, computers, and IoT devices to enhance data storage capabilities. The market implications include improved product performance and reliability, potentially leading to increased consumer satisfaction and market competitiveness.
Questions about Memory Cell Technology: 1. How does the unique configuration of the memory cell contribute to its performance? The unique configuration of the memory cell, with the ferroelectric material and the oxide semiconductor layer, aims to optimize data storage efficiency and stability by utilizing varying concentrations of the semiconductor element in different regions.
2. What potential impact could this innovation have on the semiconductor industry? This innovation could potentially lead to advancements in semiconductor technology, particularly in the development of more reliable and efficient memory storage solutions for electronic devices.
Original Abstract Submitted
a memory cell includes a ferroelectric (fe) material contacting a word line; and an oxide semiconductor (os) layer contacting a source line and a bit line, wherein the fe material is disposed between the os layer and the word line. the os layer comprises: a first region adjacent the fe material, the first region having a first concentration of a semiconductor element; a second region adjacent the source line, the second region having a second concentration of the semiconductor element; and a third region between the first region and the second region, the third region having a third concentration of the semiconductor element, the third concentration is greater than the second concentration and less than the first concentration.
