Taiwan semiconductor manufacturing company, ltd. (20240379845). TRANSISTOR STRUCTURE AND METHODS OF FORMATION simplified abstract

TRANSISTOR STRUCTURE AND METHODS OF FORMATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chen-Liang Chu of Hsin-Chu City (TW)

Hsin-Chih Chiang of Hsinchu City (TW)

Ruey-Hsin Liu of Hsin-Chu (TW)

Ta-Yuan Kung of New Taipei City (TW)

Ta-Chuan Liao of Taichung City (TW)

Chih-Wen Yao of Hsinchu City (TW)

Ming-Ta Lei of Hsin-Chu City (TW)

TRANSISTOR STRUCTURE AND METHODS OF FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379845 titled 'TRANSISTOR STRUCTURE AND METHODS OF FORMATION

Simplified Explanation: The patent application describes a medium voltage transistor in a level shifter circuit that includes innovative features to improve performance and reduce current leakage.

Key Features and Innovation:

• Inclusion of a p-well region in the substrate for the medium voltage transistor.
• N-type lightly-doped source/drain (nldd) region to reduce threshold voltage and enable medium voltage operation.
• Buffer layer to reduce current leakage in the transistor due to light doping in the nldd region.
• Thermal region to maintain threshold voltage while reducing current leakage.

Potential Applications: The technology can be applied in various electronic devices requiring medium voltage transistors, such as power management circuits, voltage regulators, and signal processing circuits.

Problems Solved: The technology addresses issues related to threshold voltage reduction, current leakage, and overall performance improvement in medium voltage transistors.

Benefits:

• Enhanced performance of medium voltage transistors.
• Reduced current leakage.
• Improved threshold voltage control.

Commercial Applications: Potential commercial applications include the semiconductor industry for the development of more efficient and reliable electronic devices.

Prior Art: Readers can explore prior research on medium voltage transistors, level shifter circuits, and semiconductor device design to understand the context of this innovation.

Frequently Updated Research: Stay updated on advancements in semiconductor technology, transistor design, and power management circuits for relevant research.

Questions about Medium Voltage Transistors: 1. How does the inclusion of a buffer layer help reduce current leakage in the medium voltage transistor? 2. What are the main advantages of using an n-type lightly-doped source/drain region in the transistor design?

Original Abstract Submitted

a medium voltage transistor of a level shifter circuit may include a p-well region in a substrate. moreover, the medium voltage transistor may include an n-type lightly-doped source/drain (nldd) region in which an n source/drain region of the medium voltage transistor is included. the light doping in the nldd region enables a threshold voltage (vi) to be reduced while enabling medium voltage operation at the n source/drain region. to reduce the amount of current leakage in the medium voltage transistor due to the light doping in the nldd region, a buffer layer may be included over and/or on a portion of the nldd region under a gate structure of the medium voltage transistor. the nldd region and the thermal region of the medium voltage transistor enables the threshold voltage of the medium voltage transistor while maintaining the same current leakage performance or reducing current leakage in the medium voltage transistor.