Taiwan semiconductor manufacturing company, ltd. (20240379836). Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same simplified abstract

Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei Wang of Hsinchu (TW)

Wei-Chen Yang of Hsinchu (TW)

Yao-Chung Chang of Zhubei City (TW)

Ru-Yi Su of Yunlin County (TW)

Yen-Ku Lin of Hsinchu (TW)

Chuan-Wei Tsou of Hsinchu (TW)

Chun Lin Tsai of Hsin-Chu (TW)

Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379836 titled 'Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same

The present disclosure introduces a semiconductor structure featuring a gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the GaN layer, a gate stack on the AlGaN layer, source and drain features on the AlGaN layer separated by the gate stack, a dielectric material layer on the gate stack, and a field plate on the dielectric material layer connected to the source feature, with a step-wise structure.

• Gallium nitride (GaN) layer on substrate
• Aluminum gallium nitride (AlGaN) layer on GaN layer
• Gate stack on AlGaN layer
• Source and drain features on AlGaN layer separated by gate stack
• Dielectric material layer on gate stack
• Field plate on dielectric material layer with step-wise structure

Potential Applications: - Power electronics - RF devices - LED lighting

Problems Solved: - Improved performance of semiconductor devices - Enhanced efficiency and reliability

Benefits: - Higher power handling capabilities - Better thermal management - Increased device lifespan

Commercial Applications: - Power amplifiers - High-frequency devices - Lighting applications

Questions about the Semiconductor Structure: 1. How does the step-wise structure of the field plate contribute to the performance of the semiconductor device? 2. What advantages does the use of aluminum gallium nitride (AlGaN) bring to the overall functionality of the structure?

Original Abstract Submitted

the present disclosure provides a semiconductor structure. the semiconductor structure includes a gallium nitride (gan) layer on a substrate; an aluminum gallium nitride (algan) layer disposed on the gan layer; a gate stack disposed on the algan layer; a source feature and a drain feature disposed on the algan layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.