Taiwan semiconductor manufacturing company, ltd. (20240379827). CHANNEL LAST PROCESS FOR DUMMY GATE VOID DEFECT REDUCTION simplified abstract
Contents
CHANNEL LAST PROCESS FOR DUMMY GATE VOID DEFECT REDUCTION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
Chen-Ping Chen of Toucheng Township (TW)
Hsiao Wen Lee of Hsinchu City (TW)
Chih-Han Lin of Hsinchu City (TW)
CHANNEL LAST PROCESS FOR DUMMY GATE VOID DEFECT REDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379827 titled 'CHANNEL LAST PROCESS FOR DUMMY GATE VOID DEFECT REDUCTION
The method disclosed in the patent application involves fabricating a semiconductor device by forming semiconductor fins on a substrate, creating a first dummy gate over the fins, and forming a recess in the first dummy gate between the semiconductor fins. A dummy fin material is then placed in the recess, with a portion of it removed to expose the upper surface of the first dummy gate and form a dummy fin. Finally, a second dummy gate is formed on the exposed upper surface of the first dummy gate.
- Formation of semiconductor fins on a substrate
- Creation of a first dummy gate over the semiconductor fins
- Formation of a recess in the first dummy gate between the fins
- Placement of dummy fin material in the recess
- Removal of a portion of the dummy fin material to expose the upper surface of the first dummy gate and form a dummy fin
- Formation of a second dummy gate on the exposed upper surface of the first dummy gate
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Advanced electronic devices
Problems Solved: - Improved control and manipulation of semiconductor components - Enhanced performance and efficiency of semiconductor devices
Benefits: - Higher precision in semiconductor device fabrication - Increased functionality and reliability of electronic components
Commercial Applications: - Production of high-performance processors - Development of cutting-edge electronic devices for various industries
Questions about the technology: 1. How does the method of forming dummy fins improve the performance of semiconductor devices? 2. What are the specific advantages of using dummy gates in semiconductor fabrication processes?
Frequently Updated Research: - Ongoing advancements in semiconductor manufacturing techniques - Research on the optimization of dummy gate structures for enhanced device performance
Original Abstract Submitted
a method of fabricating a semiconductor device is disclosed. the method includes forming semiconductor fins on a substrate. a first dummy gate is formed over the semiconductor fins. a recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. a dummy fin material is formed in the recess. a portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. a second dummy gate is formed on the exposed upper surface of the first dummy gate.
