Taiwan semiconductor manufacturing company, ltd. (20240379826). FinFET Device Comprising Plurality of Dummy Protruding Features simplified abstract
Contents
FinFET Device Comprising Plurality of Dummy Protruding Features
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Che-Cheng Chang of New Taipei City (TW)
Horng-Huei Tseng of Hsinchu (TW)
FinFET Device Comprising Plurality of Dummy Protruding Features - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379826 titled 'FinFET Device Comprising Plurality of Dummy Protruding Features
The method described in the patent application involves the formation of active fin structures on a substrate, with a dummy fin structure placed between them. The dummy fin structure is later removed to expose a portion of the substrate, where protruding features are formed. A shallow trench isolation (STI) region is then created over this portion of the substrate, covering the protruding features and parts of the active fin structures.
- Formation of active fin structures on a substrate with a dummy fin structure in between.
- Removal of the dummy fin structure to expose a portion of the substrate.
- Creation of protruding features on the exposed substrate portion.
- Formation of a shallow trench isolation (STI) region over the exposed substrate portion, covering the protruding features and parts of the active fin structures.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research
Problems Solved: - Enhancing the performance and efficiency of semiconductor devices - Improving the reliability of integrated circuits - Facilitating the miniaturization of electronic components
Benefits: - Increased functionality of semiconductor devices - Enhanced structural integrity of integrated circuits - Streamlined manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Manufacturing Technology for Enhanced Device Performance This technology could be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Questions about the technology: 1. How does the presence of the dummy fin structure impact the overall structure of the active fin structures? 2. What are the specific advantages of using protruding features in conjunction with the shallow trench isolation (STI) region in semiconductor manufacturing processes?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further optimize the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in this field to leverage cutting-edge technologies for your applications.
Original Abstract Submitted
a method includes forming a first active fin structure and a second active fin structure on a substrate. a dummy fin structure is formed on the substrate, the dummy fin structure being interposed between the first active fin structure and the second active fin structure. the dummy fin structure is removed to expose a first portion of the substrate, the first portion of the substrate being disposed directly below the dummy fin structure. a plurality of protruding features is formed on the first portion of the substrate. a shallow trench isolation (sti) region is formed over the first portion of the substrate, the sti region covering the plurality of protruding features, at least a portion of the first active fin structure and at least a portion of the second active fin structure extending above a topmost surface of the sti region.
