Taiwan semiconductor manufacturing company, ltd. (20240379821). FIN-END GATE STRUCTURES AND METHOD FORMING SAME simplified abstract

FIN-END GATE STRUCTURES AND METHOD FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Kuei-Yu Kao of Hsinchu (TW)

Chen-Ping Chen of Toucheng Township (TW)

Chih-Han Lin of Hsinchu (TW)

FIN-END GATE STRUCTURES AND METHOD FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379821 titled 'FIN-END GATE STRUCTURES AND METHOD FORMING SAME

The method described in the abstract involves the simultaneous formation of dummy gate stacks on different portions of a protruding fin, followed by the removal of gate electrodes to create trenches, the use of an etching mask to protect certain areas, and the subsequent formation of replacement gate stacks.

• Simultaneous formation of first and second dummy gate stacks on a fin
• Removal of gate electrodes to create trenches
• Use of an etching mask to protect specific areas during the process
• Formation of replacement gate stacks in the trenches

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Nanotechnology research

Problems Solved: - Efficient fabrication of replacement gate stacks - Precise control over gate electrode removal process - Enhanced performance of semiconductor devices

Benefits: - Improved functionality of integrated circuits - Higher processing speeds in electronic devices - Enhanced reliability of semiconductor components

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be applied in the development of cutting-edge semiconductor components for various industries.

Questions about the technology: 1. How does the simultaneous formation of dummy gate stacks improve the manufacturing process? 2. What are the advantages of using an etching mask in semiconductor fabrication?

Original Abstract Submitted

a method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second dummy gate dielectric of the second dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.