Taiwan semiconductor manufacturing company, ltd. (20240379820). AIR SPACER AND METHOD OF FORMING SAME simplified abstract

AIR SPACER AND METHOD OF FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ming-Jhe Sie of Taipei (TW)

Chen-Huang Huang of Hsinchu (TW)

Shao-Hua Hsu of Taitung City (TW)

Cheng-Chung Chang of Kaohsiung City (TW)

Szu-Ping Lee of Changhua County (TW)

An Chyi Wei of Hsinchu (TW)

Shiang-Bau Wang of Pingzchen City (TW)

Chia-Jen Chen of Hsinchu (TW)

AIR SPACER AND METHOD OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379820 titled 'AIR SPACER AND METHOD OF FORMING SAME

The method described in the patent application involves the formation of a semiconductor device with an innovative air gap structure.

• Formation of a dummy gate stack over a substrate
• Creation of spacer layers and sacrificial liner
• Etching of spacer layers to create an air gap
• Refilling the air gap with a refill layer

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.

Problems Solved: - Provides a solution for reducing parasitic capacitance in semiconductor devices. - Enhances the performance and efficiency of the devices.

Benefits: - Improved device performance due to reduced parasitic capacitance. - Enhanced reliability and longevity of semiconductor devices.

Commercial Applications: - This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.

Questions about the technology: 1. How does the formation of an air gap improve the performance of semiconductor devices?

  - The air gap reduces parasitic capacitance, leading to enhanced device performance.

2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing?

  - Large-scale implementation may require optimization of the fabrication process and materials used.

Original Abstract Submitted

in an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ild) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.