Taiwan semiconductor manufacturing company, ltd. (20240379819). PARTIAL DIRECTIONAL ETCH METHOD AND RESULTING STRUCTURES simplified abstract
Contents
PARTIAL DIRECTIONAL ETCH METHOD AND RESULTING STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shiang-Bau Wang of Pingzchen City (TW)
PARTIAL DIRECTIONAL ETCH METHOD AND RESULTING STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379819 titled 'PARTIAL DIRECTIONAL ETCH METHOD AND RESULTING STRUCTURES
Simplified Explanation: In a gate replacement process, a dummy gate and adjacent structure, such as a source/drain region, are formed. The dummy gate is partially removed using a directional etch to create a trench, leaving a portion of the dummy gate to protect the adjacent structure. A gate electrode can then be formed in the trench.
Key Features and Innovation:
- Formation of a dummy gate and adjacent structure.
- Partial removal of the dummy gate using a directional etch.
- Protection of the adjacent structure during the gate replacement process.
- Formation of a gate electrode in the trench.
- Two-step process involving an initial isotropic etch followed by a directional etch.
Potential Applications: This technology can be applied in semiconductor manufacturing processes for creating gate electrodes in integrated circuits.
Problems Solved: This technology addresses the challenge of replacing gates in semiconductor devices without damaging the adjacent structures.
Benefits:
- Improved precision in gate replacement processes.
- Enhanced protection of adjacent structures.
- Facilitates the formation of gate electrodes with high accuracy.
Commercial Applications: Potential commercial applications include the production of advanced semiconductor devices with precise gate structures, catering to the electronics industry's demand for high-performance integrated circuits.
Prior Art: Further research can be conducted on similar gate replacement processes in semiconductor manufacturing to explore existing technologies and innovations in this field.
Frequently Updated Research: Researchers are continually exploring new methods and materials for enhancing gate replacement processes in semiconductor manufacturing to improve efficiency and accuracy.
Questions about Gate Replacement Technology: 1. What are the key challenges faced in gate replacement processes in semiconductor manufacturing? 2. How does the directional etch technique improve the precision of gate replacement in semiconductor devices?
Original Abstract Submitted
in a gate replacement process, a dummy gate and adjacent structure, such as a source/drain region, are formed. the dummy gate is removed, at least in part, using a directional etch to remove some but not all of the dummy gate to form a trench. a portion of the dummy gate remains and protects the adjacent structure. a gate electrode can then be formed in the trench. a two step process can be employed, using an initial isotropic etch followed by the directional etch.
