Taiwan semiconductor manufacturing company, ltd. (20240379818). DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION simplified abstract
Contents
DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379818 titled 'DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION
The method described in the patent application involves the formation of an active channel region, a dummy channel region, first and second gate dielectric layers, a gate isolation region, and first and second gate stacks.
- Forming an active channel region
- Forming a dummy channel region
- Applying first and second gate dielectric layers
- Removing the second gate dielectric layer from the dummy channel region
- Creating a gate isolation region over and contacting the dummy channel region
- Forming first and second gate stacks
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Enhancing transistor performance - Improving gate stack isolation - Optimizing semiconductor device functionality
Benefits: - Increased efficiency in semiconductor manufacturing - Enhanced performance of integrated circuits - Improved reliability of electronic devices
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process This technology can be used in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Researchers can explore prior patents related to gate dielectric layers, gate stacks, and semiconductor device manufacturing processes to understand the evolution of this technology.
Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices using similar methods.
Questions about the technology: 1. How does the formation of a gate isolation region impact the functionality of the semiconductor device? 2. What are the key differences between the first and second gate stacks in terms of their composition and structure?
Original Abstract Submitted
a method includes forming an active channel region, forming a dummy channel region, forming a first gate dielectric layer over the active channel region, forming a second gate dielectric layer over the dummy channel region, removing the second gate dielectric layer from the dummy channel region, forming a gate isolation region over and contacting the dummy channel region, and forming a first gate stack and a second gate stack. the first gate stack is on the active channel region. the gate isolation region separates the first gate stack from the second gate stack.
