Taiwan semiconductor manufacturing company, ltd. (20240379817). STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES simplified abstract
Contents
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Bwo-Ning Chen of Keelung City (TW)
Chang-Miao Liu of Hsinchu City (TW)
STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379817 titled 'STRESS-INDUCING SILICON LINER IN SEMICONDUCTOR DEVICES
The semiconductor structure in this patent application consists of a p-type metal-oxide semiconductor (PMOS) region and an n-type metal-oxide semiconductor (NMOS) region, with first source/drain (S/D) features in the PMOS region and second S/D features in the NMOS region. There are first and second channel regions connecting the respective S/D features, each with a high-k metal gate stack (HKMG) and gate spacers. Etch-stop layers (ESL) are present on the S/D features and gate spacers, with an oxide layer on the first ESL. An interlayer dielectric (ILD) layer is on top of the oxide layer and the second ESL.
- PMOS and NMOS regions
- Source/drain features in each region
- Channel regions connecting the source/drain features
- High-k metal gate stacks and gate spacers
- Etch-stop layers on source/drain features and gate spacers
- Oxide layer on the first etch-stop layer
- Interlayer dielectric layer on top of the oxide layer and the second etch-stop layer
- Potential Applications:**
- Semiconductor manufacturing - Integrated circuits - Electronics industry
- Problems Solved:**
- Enhancing semiconductor performance - Improving transistor efficiency - Reducing power consumption
- Benefits:**
- Higher speed and performance - Lower power consumption - Enhanced reliability
- Commercial Applications:**
- Production of advanced electronic devices - Semiconductor fabrication industry - Technology companies developing cutting-edge products
- Questions about Semiconductor Structure:**
1. How does the presence of high-k metal gate stacks impact the performance of the semiconductor structure? 2. What are the specific advantages of having etch-stop layers in the semiconductor design?
- Frequently Updated Research:**
Ongoing research in semiconductor materials and structures may lead to further advancements in this technology, improving efficiency and performance in electronic devices.
Original Abstract Submitted
a semiconductor structure includes a p-type metal-oxide semiconductor (pmos) region and an n-type metal-oxide semiconductor (nmos) region, first source/drain (s/d) features in the pmos region and second s/d features in the nmos region, a first channel region connecting the first s/d features and a second channel region connecting the second s/d features, a first high-k metal gate stack (hkmg) over the first channel region and a second hkmg over the second channel region, first gate spacers on sidewalls of the first hkmg and second gate spacers on sidewalls of the second hkmg, a first etch-stop layer (esl) on the first s/d features and the first gate spacers and a second esl on the second s/d features and the second gate spacers, an oxide layer on the first esl but not the second esl, and an interlayer dielectric (ild) layer on the oxide layer and the second esl.
