Taiwan semiconductor manufacturing company, ltd. (20240379815). DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION simplified abstract
Contents
DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Bor Chiuan Hsieh of Taoyuan City (TW)
Tsai-Jung Ho of Xihu Township (TW)
DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379815 titled 'DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION
The method described in the patent application involves a series of steps to create a contact opening for a source/drain region in a semiconductor device.
- Forming a dummy gate stack over a semiconductor region
- Forming gate spacers on opposing sides of the dummy gate stack
- Forming a source/drain region on a side of the dummy gate stack
- Forming an inter-layer dielectric over the source/drain region
- Replacing the dummy gate stack with a replacement gate stack
- Recessing the replacement gate stack to form a recess between the gate spacers
- Depositing a liner extending into the recess
- Depositing a masking layer over the liner and extending into the recess
- Forming an etching mask covering a portion of the masking layer
- Etching the inter-layer dielectric to form a source/drain contact opening
- Forming a source/drain contact plug in the source/drain contact opening
- Forming a gate contact plug extending between the gate spacers and electrically connecting to the replacement gate stack
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Facilitates the creation of source/drain contact openings in semiconductor devices - Improves the efficiency and accuracy of the manufacturing process
Benefits: - Enhanced performance of semiconductor devices - Increased reliability and functionality - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Improved Device Performance This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit companies involved in semiconductor manufacturing and integrated circuit design.
Prior Art: Prior art related to this technology may include patents or research papers on semiconductor device fabrication processes, gate stack formation, and source/drain contact opening techniques.
Frequently Updated Research: Researchers in the field of semiconductor manufacturing are constantly exploring new methods to enhance device performance and efficiency. Stay updated on the latest advancements in gate stack technology and source/drain contact opening processes to remain at the forefront of innovation.
Questions about the technology: 1. How does the method described in the patent application improve the manufacturing process of semiconductor devices? 2. What are the key advantages of using a replacement gate stack in creating source/drain contact openings?
Original Abstract Submitted
a method includes forming a dummy gate stack over a semiconductor region, forming gate spacers on opposing sides of the dummy gate stack, forming a source/drain region on a side of the dummy gate stack, forming an inter-layer dielectric over the source/drain region, replacing the dummy gate stack with a replacement gate stack, recessing the replacement gate stack to form a recess between the gate spacers, depositing a liner extending into the recess, depositing a masking layer over the liner and extending into the recess, forming an etching mask covering a portion of the masking layer, and etching the inter-layer dielectric to form a source/drain contact opening. the source/drain region is underlying and exposed to the source/drain contact opening. a source/drain contact plug is formed in the source/drain contact opening. a gate contact plug extends between the gate spacers and electrically connecting to the replacement gate stack.
