Taiwan semiconductor manufacturing company, ltd. (20240379813). Semiconductor Devices with Air Gaps and the Method Thereof simplified abstract
Contents
Semiconductor Devices with Air Gaps and the Method Thereof
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Lung Cheng of Kaohsiung County (TW)
Chang-Miao Liu of Hsinchu City (TW)
Semiconductor Devices with Air Gaps and the Method Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379813 titled 'Semiconductor Devices with Air Gaps and the Method Thereof
The semiconductor structure described in the patent application includes a substrate, a semiconductor fin-shaped structure protruding from the substrate, an isolation feature adjacent to the semiconductor fin-shaped structure, a metal gate stack over a channel region of the semiconductor fin-shaped structure, a gate spacer along the sidewalls of the metal gate stack and the semiconductor fin-shaped structure, a source/drain feature adjacent to the metal gate stack, a dielectric layer over the source/drain feature, and an air gap between the gate spacer and the dielectric layer.
- Semiconductor structure with a unique configuration for improved performance.
- Integration of metal gate stack and gate spacer for enhanced functionality.
- Use of air gap for reducing parasitic capacitance and improving efficiency.
- Implementation of source/drain feature for optimized electrical characteristics.
- Overall design aimed at enhancing the performance of semiconductor devices.
Potential Applications: - Advanced semiconductor devices in electronics industry. - High-performance computing applications. - Power management systems. - Communication technologies. - Automotive electronics.
Problems Solved: - Addressing issues related to parasitic capacitance. - Improving overall performance and efficiency of semiconductor devices. - Enhancing electrical characteristics for better functionality. - Optimizing design for various applications in the industry.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and reliability. - Optimal electrical characteristics for different applications. - Potential for advancements in various technological fields. - Competitive edge in the semiconductor industry.
Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Performance in Electronics Industry Description: This technology can be utilized in the development of high-performance semiconductor devices for various commercial applications in electronics, computing, communication, and automotive industries. The innovative design offers improved efficiency, functionality, and reliability, making it a valuable asset for companies seeking cutting-edge solutions in semiconductor technology.
Questions about Semiconductor Structure: 1. How does the integration of the metal gate stack and gate spacer contribute to the performance of the semiconductor structure? 2. What are the potential implications of using an air gap in the design of semiconductor devices for reducing parasitic capacitance?
Original Abstract Submitted
a semiconductor structure includes a substrate, a semiconductor fin-shaped structure protruding from the substrate and extending lengthwise along a first direction, an isolation feature disposed over the substrate and adjacent to the semiconductor fin-shaped structure and extending lengthwise along the first direction, a metal gate stack disposed over a channel region of the semiconductor fin-shaped structure and extending lengthwise along a second direction perpendicular to the first direction, a gate spacer disposed along a sidewall of the metal gate stack and along a sidewall of the semiconductor fin-shaped structure, a source/drain feature disposed over a source/drain region of the semiconductor fin-shaped structure and adjacent to the metal gate stack, a dielectric layer disposed over the source/drain feature, and an air gap disposed between the gate spacer and the dielectric layer along the first direction and wrapping around the semiconductor fin-shaped structure.
