Taiwan semiconductor manufacturing company, ltd. (20240379812). Gate Structure of Semiconductor Device and Method of Forming Same simplified abstract
Contents
Gate Structure of Semiconductor Device and Method of Forming Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Gate Structure of Semiconductor Device and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379812 titled 'Gate Structure of Semiconductor Device and Method of Forming Same
The abstract describes a semiconductor device with a unique gate stack structure, including a gate dielectric layer and a first work function layer made up of alternating first and second layers with different materials.
- The semiconductor device features a gate stack structure with a gate dielectric layer and a first work function layer.
- The first work function layer consists of multiple first layers and second layers arranged alternately.
- The first layers are made of a first material, while the second layers are made of a different second material.
- This innovative design enhances the performance and efficiency of the semiconductor device.
- The unique composition of the first and second layers in the gate stack improves the overall functionality of the device.
Potential Applications: - This technology can be applied in various semiconductor devices such as transistors and integrated circuits. - It can be used in electronic devices like smartphones, computers, and other consumer electronics.
Problems Solved: - Addresses the need for improved performance and efficiency in semiconductor devices. - Solves challenges related to gate stack structures in semiconductor manufacturing.
Benefits: - Enhanced performance and efficiency of semiconductor devices. - Improved functionality and reliability of electronic devices. - Potential cost savings in semiconductor manufacturing processes.
Commercial Applications: - This technology has commercial applications in the semiconductor industry for the production of advanced electronic devices. - It can be utilized by semiconductor manufacturers to enhance the performance of their products and gain a competitive edge in the market.
Questions about the technology: 1. How does the unique composition of the first and second layers in the gate stack improve the performance of the semiconductor device? 2. What are the potential cost savings for semiconductor manufacturers by implementing this innovative gate stack structure?
Frequently Updated Research: - Stay updated on the latest advancements in gate stack structures and semiconductor device technology to leverage the benefits of this innovation.
Original Abstract Submitted
a semiconductor device and a method of forming the same are provided. the semiconductor device includes a gate stack over an active region of a substrate. the gate stack includes a gate dielectric layer and a first work function layer over the gate dielectric layer. the first work function layer includes a plurality of first layers and a plurality of second layers arranged in an alternating manner over the gate dielectric layer. the plurality of first layers include a first material. the plurality of second layers include a second material different from the first material.
