Taiwan semiconductor manufacturing company, ltd. (20240379809). TRANSISTOR GATE STRUCTURES simplified abstract
Contents
TRANSISTOR GATE STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
TRANSISTOR GATE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379809 titled 'TRANSISTOR GATE STRUCTURES
In an embodiment, a device includes: a p-type transistor including: a first channel region; a first gate dielectric layer on the first channel region; a tungsten-containing work function tuning layer on the first gate dielectric layer; and a first fill layer on the tungsten-containing work function tuning layer; and an n-type transistor including: a second channel region; a second gate dielectric layer on the second channel region; a tungsten-free work function tuning layer on the second gate dielectric layer; and a second fill layer on the tungsten-free work function tuning layer.
- Simplified Explanation:
The device described in the patent application consists of two transistors, one p-type and one n-type, each with specific layers to control their work function tuning.
- Key Features and Innovation:
- Includes a p-type transistor with a tungsten-containing work function tuning layer. - Features an n-type transistor with a tungsten-free work function tuning layer. - Utilizes specific layers to control the work function tuning of each transistor.
- Potential Applications:
- Semiconductor devices - Integrated circuits - Electronics industry
- Problems Solved:
- Control of work function tuning in transistors - Optimization of transistor performance
- Benefits:
- Improved transistor functionality - Enhanced performance in electronic devices
- Commercial Applications:
Potential commercial applications include the manufacturing of advanced semiconductor devices for various electronic products, such as smartphones, computers, and other consumer electronics.
- Questions about the Technology:
1. How does the tungsten-containing work function tuning layer impact the performance of the p-type transistor? 2. What advantages does the tungsten-free work function tuning layer provide for the n-type transistor?
- Frequently Updated Research:
There may be ongoing research in the field of semiconductor device fabrication and optimization of transistor performance using work function tuning layers. Researchers may be exploring new materials and techniques to further enhance transistor functionality.
Original Abstract Submitted
in an embodiment, a device includes: a p-type transistor including: a first channel region; a first gate dielectric layer on the first channel region; a tungsten-containing work function tuning layer on the first gate dielectric layer; and a first fill layer on the tungsten-containing work function tuning layer; and an n-type transistor including: a second channel region; a second gate dielectric layer on the second channel region; a tungsten-free work function tuning layer on the second gate dielectric layer; and a second fill layer on the tungsten-free work function tuning layer.
