Taiwan semiconductor manufacturing company, ltd. (20240379808). SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF simplified abstract
Contents
SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Shun Lo of Hsinchu County (TW)
Yu-Chi Chang of Kaohsiung City (TW)
Yingkit Felix Tsui of Cupertino CA (US)
SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379808 titled 'SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF
The semiconductor device described in the abstract includes a substrate with a p-well region, n-well regions on either side of and abutting the p-well region, and a deep n-well region beneath and abutting both the p-well region and part of the n-well region. Additionally, the device has a first conductive layer over a cathode region of the p-well region, forming a Schottky barrier, and a second conductive layer over anode regions of the p-well region.
- The semiconductor device features a unique structure with multiple well regions and conductive layers.
- A Schottky barrier is formed at the junction of the first conductive layer and the p-well region.
- Anode regions on either side of the cathode region enhance the device's functionality.
- The deep n-well region provides additional support and connectivity within the device.
- The innovative design of the semiconductor device improves performance and efficiency.
Potential Applications: - Power electronics - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Enhanced conductivity and performance - Improved junction formation - Increased efficiency in semiconductor devices
Benefits: - Higher functionality and performance - Improved connectivity and conductivity - Enhanced efficiency in power electronics
Commercial Applications: Title: Advanced Semiconductor Devices for Power Electronics This technology can be utilized in the development of high-performance power electronics systems for various industries, including automotive, renewable energy, and telecommunications. The innovative design offers improved efficiency and reliability, making it a valuable asset in the semiconductor market.
Questions about the technology: 1. How does the unique structure of the semiconductor device contribute to its performance? 2. What are the specific advantages of the Schottky barrier formed in the device?
Original Abstract Submitted
a semiconductor device includes a substrate having a p-well region, an n-well region disposed on either side of and abutting the p-well region, and a deep n-well region disposed beneath and abutting both the p-well region and at least part of the n-well region on either side of the p-well region. the semiconductor device further includes a first conductive layer formed over a cathode region of the p-well region, where a schottky barrier is formed at a junction of the first conductive layer and the p-well region. the semiconductor device further includes a second conductive layer formed over anode regions of the p-well region, where the anode regions are disposed on either side of the cathode region.
