Taiwan semiconductor manufacturing company, ltd. (20240379807). METAL SOURCE/DRAIN FEATURES simplified abstract

METAL SOURCE/DRAIN FEATURES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Pei-Yu Wang of Hsinchu City (TW)

METAL SOURCE/DRAIN FEATURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379807 titled 'METAL SOURCE/DRAIN FEATURES

The method described in the abstract involves processing a workpiece with specific components to achieve a desired outcome.

• The workpiece consists of a fin-shaped structure with different regions, a metal gate structure, a dummy source/drain feature, and a dielectric structure.
• The method includes creating a trench to expose the channel region, forming an epitaxial layer over the channel region's sidewall, and placing a metal feature in the trench.

Potential Applications:

• This method could be used in semiconductor manufacturing processes to enhance the performance of electronic devices.
• It may find applications in the production of advanced integrated circuits for various electronic devices.

Problems Solved:

• This method addresses the need for precise and efficient fabrication techniques in semiconductor manufacturing.
• It helps in improving the functionality and performance of electronic components.

Benefits:

• Enhanced precision and control in the fabrication of semiconductor devices.
• Improved performance and reliability of electronic devices.

Commercial Applications:

• This technology could be valuable in the semiconductor industry for producing high-performance electronic components.
• It may have implications for the development of next-generation electronic devices.

Questions about the Technology: 1. How does this method contribute to the advancement of semiconductor manufacturing processes? 2. What specific benefits does the epitaxial layer provide in enhancing the performance of electronic devices?

Frequently Updated Research: Ongoing research in semiconductor fabrication techniques and materials could further optimize the efficiency and effectiveness of this method.

Original Abstract Submitted

a method according to the present disclosure includes providing a workpiece. the workpiece includes a fin-shaped structure including a channel region and a source/drain region, a metal gate structure disposed over the channel region, a dummy source/drain feature disposed over the source/drain region, and a dielectric structure disposed over the dummy source/drain feature. the method further includes forming a trench through the dielectric structure and the dummy source/drain feature to expose a sidewall of the channel region, forming an epitaxial layer over the sidewall of the channel region, and forming a metal feature over a sidewall of the epitaxial layer and in the trench.