Taiwan semiconductor manufacturing company, ltd. (20240379806). SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER simplified abstract

SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Ming Hsu of Hualien County (TW)

Pei-Yu Chou of Hsinchu County (TW)

Chih-Pin Tsao of Zhubei City (TW)

Kuang-Yuan Hsu of Taichung City (TW)

Jyh-Huei Chen of Hsinchu City (TW)

SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379806 titled 'SEMICONDUCTOR DEVICES HAVING SILICIDE LAYER

The semiconductor device described in the abstract includes a source/drain region, a source/drain silicide layer on the source/drain region, and a first contact over the source/drain silicide layer. The first contact consists of a first metal layer, with the upper surface of the first metal layer covered by a silicide layer containing the same metal element as the first metal layer.

• The semiconductor device features a source/drain silicide layer that enhances conductivity and performance.
• The first contact design with a silicide layer improves the overall efficiency of the device.
• The use of the same metal element in both the first metal layer and the silicide layer ensures compatibility and stability in the device.
• This innovation contributes to the advancement of semiconductor technology by optimizing contact structures for improved functionality.
• The integration of silicide layers in the device enhances the electrical properties and reliability of the semiconductor device.

Potential Applications: - This technology can be applied in the manufacturing of high-performance semiconductor devices. - It can be utilized in the development of advanced integrated circuits for various electronic applications.

Problems Solved: - Enhances conductivity and performance of semiconductor devices. - Improves efficiency and reliability of contact structures in semiconductor technology.

Benefits: - Increased efficiency and performance of semiconductor devices. - Enhanced electrical properties and reliability. - Compatibility and stability in contact structures.

Commercial Applications: Title: Advanced Semiconductor Devices with Enhanced Contact Structures This technology can be commercialized in the production of high-performance electronic devices, integrated circuits, and other semiconductor applications. It has the potential to drive innovation in the semiconductor industry and meet the growing demand for efficient and reliable electronic components.

Questions about Semiconductor Devices with Enhanced Contact Structures: 1. How does the integration of silicide layers improve the performance of semiconductor devices? 2. What are the key benefits of using the same metal element in both the first metal layer and the silicide layer in semiconductor devices?

Original Abstract Submitted

a semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. the first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.