Taiwan semiconductor manufacturing company, ltd. (20240379803). FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD simplified abstract
Contents
FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379803 titled 'FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD
The abstract describes a device with two semiconductor channels separated laterally, each with a gate structure wrapping around it. Source/drain regions are adjacent to each channel, with an isolation structure between them.
- Device with two semiconductor channels and gate structures
- Source/drain regions adjacent to each channel
- Isolation structure separating the source/drain regions
- First isolation region in contact with bottom surfaces, second isolation region in contact with sidewalls
- Isolation structure extends from bottom surface of first isolation region to upper surfaces of source/drain regions
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing
Problems Solved: - Efficient use of space in semiconductor devices - Improved performance and reliability of integrated circuits
Benefits: - Enhanced functionality of electronic devices - Increased efficiency in semiconductor manufacturing processes
Commercial Applications: Title: "Advanced Semiconductor Devices for Enhanced Electronics Manufacturing" This technology can be applied in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and industrial machinery. The market implications include increased demand for advanced semiconductor components and potential partnerships with electronics manufacturers.
Prior Art: Readers can explore prior patents related to semiconductor device structures, gate wrapping techniques, and isolation structures in semiconductor manufacturing processes to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly developing new methods to enhance semiconductor device performance, optimize manufacturing processes, and improve the reliability of integrated circuits. Stay updated on the latest advancements in semiconductor technology to remain at the forefront of innovation.
Questions about Semiconductor Device Structures: 1. How do the gate structures in this device contribute to its overall performance? The gate structures in this device play a crucial role in controlling the flow of current in the semiconductor channels, leading to improved functionality and efficiency.
2. What are the key differences between the first isolation region and the second isolation region in the isolation structure? The first isolation region is in contact with the bottom surfaces of the source/drain regions, while the second isolation region is in contact with the sidewalls, providing comprehensive isolation between the semiconductor channels.
Original Abstract Submitted
a device includes a substrate, a first semiconductor channel over the substrate, and a second semiconductor channel over the substrate and laterally separated from the first semiconductor channel. a gate structure covers and wraps around the first semiconductor channel and the second semiconductor channel. a first source/drain region abuts the first semiconductor channel on a first side of the gate structure, and a second source/drain region abuts the second semiconductor channel on the first side of the gate structure. an isolation structure is under and between the first source/drain region and the second source/drain region, and includes a first isolation region in contact with bottom surfaces of the first and second source/drain regions, and a second isolation region in contact with sidewalls of the first and second source/drain regions, and extending from a bottom surface of the first isolation region to upper surfaces of the first and second source/drain regions.
