Taiwan semiconductor manufacturing company, ltd. (20240379802). DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT CHANNEL CONFIGURATIONS simplified abstract
Contents
DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT CHANNEL CONFIGURATIONS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tsung-Lin Lee of Hsinchu City (TW)
Choh Fei Yeap of Hsinchu City (TW)
Da-Wen Lin of Taipei City (TW)
DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT CHANNEL CONFIGURATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379802 titled 'DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT CHANNEL CONFIGURATIONS
Simplified Explanation: The patent application describes a technology where two gate-all-around (GAA) transistors are formed on different fin structures, each with a different channel region configuration using nanostructures.
- The first GAA transistor is formed on the first fin structure with a channel region within a first plurality of nanostructures.
- The second GAA transistor is formed on the second fin structure with a channel region within a second plurality of nanostructures, which is less than the first plurality.
Key Features and Innovation:
- Formation of two GAA transistors on separate fin structures.
- Different channel region configurations using nanostructures.
- Optimization of nanostructure density for improved transistor performance.
Potential Applications: The technology can be applied in advanced semiconductor devices, integrated circuits, and other electronic applications requiring high-performance transistors.
Problems Solved:
- Enhanced transistor performance through optimized nanostructure configurations.
- Improved scalability and efficiency in semiconductor manufacturing processes.
Benefits:
- Higher transistor density on a chip.
- Increased speed and efficiency of electronic devices.
- Potential for reduced power consumption.
Commercial Applications: Advanced semiconductor manufacturing, integrated circuit design, consumer electronics, and telecommunications industries can benefit from this technology.
Questions about the Technology: 1. How does the density of nanostructures impact the performance of the GAA transistors? 2. What are the potential challenges in scaling up this technology for mass production?
Frequently Updated Research: Ongoing research focuses on further optimizing nanostructure configurations for even higher transistor performance and exploring new applications in emerging technologies.
Original Abstract Submitted
a first gate-all-around (gaa) transistor is formed on the first fin structure; the first gaa transistor has a channel region within a first plurality of nanostructures. a second gaa transistor is formed on the second fin structure; the second gaa transistor has a second channel region configuration. the second gaa transistor has a channel region within a second plurality of nanostructures. the second plurality of nanostructures is less than the first plurality of nanostructures.
