Taiwan semiconductor manufacturing company, ltd. (20240379801). TUNING GATE LENGTHS IN MULTI-GATE FIELD EFFECT TRANSISTORS simplified abstract

TUNING GATE LENGTHS IN MULTI-GATE FIELD EFFECT TRANSISTORS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Hao Pao of Kaohsiung City (TW)

Chih-Chuan Yang of Hsinchu (TW)

Shih-Hao Lin of Hsinchu (TW)

Kian-Long Lim of Hsinchu City (TW)

Chih-Hsuan Chen of Hsinchu (TW)

Ping-Wei Wang of Hsin-Chu (TW)

TUNING GATE LENGTHS IN MULTI-GATE FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379801 titled 'TUNING GATE LENGTHS IN MULTI-GATE FIELD EFFECT TRANSISTORS

The method described in the abstract involves the formation of a fin on a substrate, with the fin consisting of alternating layers of silicon (Si) and silicon germanium (SiGe) of varying concentrations.

• The fin is recessed to create an S/D (Source/Drain) recess, followed by further recessing of the SiGe layers to form an S/D feature.
• A metal gate structure is then formed over the fin and in the openings created by removing the recessed SiGe layers.
• The innovation lies in the precise control of the SiGe layer concentrations and the recessing process, which allows for the creation of a highly efficient and customizable semiconductor device.

Potential Applications:

• This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
• It can enhance the performance and efficiency of integrated circuits in microprocessors, memory devices, and other electronic components.

Problems Solved:

• Provides a method for improving the performance and functionality of semiconductor devices through precise control of SiGe layer concentrations.
• Enables the creation of more efficient and customizable semiconductor structures for advanced electronic applications.

Benefits:

• Enhanced performance and efficiency of semiconductor devices.
• Customizable design options for specific electronic applications.
• Improved functionality and reliability of integrated circuits.

Commercial Applications:

• This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced microprocessors, memory devices, and other electronic components.

Questions about the technology: 1. How does the precise control of SiGe layer concentrations impact the performance of semiconductor devices? 2. What are the potential limitations or challenges in implementing this technology in large-scale semiconductor manufacturing processes?

Frequently Updated Research: Ongoing research in semiconductor materials and device fabrication techniques may lead to further advancements in the field, potentially enhancing the capabilities of this technology.

Original Abstract Submitted

a method includes providing a substrate having a first region and a second region, forming a fin protruding from the first region, where the fin includes a first sige layer and a stack alternating si layers and second sige layers disposed over the first sige layer and the first sige layer has a first concentration of ge and each of the second sige layers has a second concentration of ge that is greater than the first concentration, recessing the fin to form an s/d recess, recessing the first sige layer and the second sige layers exposed in the s/d recess, where the second sige layers are recessed more than the first sige layer, forming an s/d feature in the s/d recess, removing the recessed first sige layer and the second sige layers to form openings, and forming a metal gate structure over the fin and in the openings.