Taiwan semiconductor manufacturing company, ltd. (20240379799). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Cheng-Ting Chung of Hsinchu City (TW)

Hou-Yu Chen of Zhubei City (TW)

Ching-Wei Tsai of Hsinchu City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379799 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The semiconductor device described in the abstract consists of several key components, including a semiconductor layer, a gate structure, a source/drain epitaxial structure, a backside dielectric cap, and an inner spacer.

• The gate structure wraps around the semiconductor layer, providing a crucial element for the device's operation.
• The source/drain epitaxial structure is positioned next to the gate structure and is electrically connected to the semiconductor layer, facilitating the flow of current within the device.
• The backside dielectric cap is located beneath the gate structure and directly contacts it, contributing to the overall functionality of the device.
• The inner spacer is in direct contact with both the gate structure and the backside dielectric cap, playing a role in the device's performance.

Potential Applications: - This semiconductor device could be utilized in various electronic applications, such as integrated circuits, microprocessors, and other semiconductor-based technologies.

Problems Solved: - The device addresses the need for efficient and reliable semiconductor components with enhanced performance capabilities.

Benefits: - Improved functionality and performance in electronic devices - Enhanced electrical connectivity and efficiency - Potential for increased speed and reliability in semiconductor applications

Commercial Applications: - The technology could find applications in the semiconductor industry for the development of advanced electronic devices with improved performance and functionality.

Questions about the technology: 1. How does the inner spacer contribute to the overall performance of the semiconductor device? 2. What are the potential implications of the backside dielectric cap in enhancing the device's functionality?

Original Abstract Submitted

a semiconductor device includes a semiconductor layer, a gate structure, a source/drain epitaxial structure, a backside dielectric cap, and an inner spacer. the gate structure wraps around the semiconductor layer. the source/drain epitaxial structure is adjacent the gate structure and electrically connected to the semiconductor layer. the backside dielectric cap is disposed under and in direct contact with the gate structure. the inner spacer is in direct contact with the gate structure and the backside dielectric cap.