Taiwan semiconductor manufacturing company, ltd. (20240379797). TRANSISTOR INSULATING FINS simplified abstract
Contents
TRANSISTOR INSULATING FINS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Cheng-Wei Chang of Taipei City (TW)
Shahaji B. More of Hsinchu (TW)
Shuen-Shin Liang of Hsinchu (TW)
Sung-Li Wang of Zhubei City (TW)
TRANSISTOR INSULATING FINS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379797 titled 'TRANSISTOR INSULATING FINS
The abstract describes a device with insulating fins, a nanostructure, and a gate structure.
- The device includes a first insulating fin and a second insulating fin.
- A nanostructure is located between the first and second insulating fins.
- A gate structure wraps around the nanostructure.
- The top surface of the gate structure is above the top surface of the first insulating fin and below the top surface of the second insulating fin.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices. - It may find applications in the field of nanoelectronics for improved performance.
Problems Solved: - Enhances the efficiency and functionality of semiconductor devices. - Allows for precise control and manipulation of electronic signals.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced control over electronic signals for various applications.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the nanostructure contribute to the functionality of the device?
The nanostructure plays a crucial role in enhancing the performance and efficiency of the semiconductor device by allowing for precise control of electronic signals.
2. What are the potential implications of using insulating fins in semiconductor devices?
Insulating fins help in reducing leakage currents and improving the overall efficiency of the device.
Original Abstract Submitted
in an embodiment, a device includes: a first insulating fin; a second insulating fin; a nanostructure between the first insulating fin and the second insulating fin; and a gate structure wrapping around the nanostructure, a top surface of the gate structure disposed above a top surface of the first insulating fin, the top surface of the gate structure disposed below a top surface of the second insulating fin.
