Taiwan semiconductor manufacturing company, ltd. (20240379793). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Shen-Yang Lee of Hsinchu City (TW)
Hsiang-Pi Chang of Hsinchu City (TW)
Huang-Lin Chao of Hsinchu City (TW)
Pinyen Lin of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379793 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
The method described in the abstract involves fabricating a semiconductor device by treating various surfaces of a conduction channel of a transistor with different layers and annealing processes.
- Exposing surfaces of a conduction channel
- Overlaying with a dielectric interfacial layer
- Adding a blocking layer on top
- Densifying the dielectric interfacial layer through annealing
- Applying a first high-k dielectric layer
- Forming threshold voltage modulation layers
- Adjusting the doping profile through a second annealing process
- Adding a second high-k dielectric layer
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits
Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of transistors - Optimizing the conduction channel of transistors
Benefits: - Increased functionality of semiconductor devices - Enhanced conductivity - Improved overall performance of electronic devices
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology could revolutionize the semiconductor industry by improving the efficiency and performance of electronic devices. It has the potential to be widely adopted in the manufacturing of integrated circuits and other electronic components.
Prior Art: Readers interested in exploring prior art related to this technology could start by researching patents and publications in the field of semiconductor device fabrication, high-k dielectric materials, and transistor technology.
Frequently Updated Research: Researchers in the field of semiconductor device fabrication are constantly exploring new materials and processes to enhance the performance of electronic devices. Stay updated on the latest advancements in high-k dielectric materials and transistor technology for potential breakthroughs in semiconductor manufacturing.
Questions about Semiconductor Device Fabrication: 1. How does the use of high-k dielectric layers impact the performance of semiconductor devices? High-k dielectric layers can improve the efficiency and conductivity of semiconductor devices by reducing leakage currents and enhancing gate control in transistors.
2. What are the key challenges in fabricating semiconductor devices with multiple layers and annealing processes? The main challenges include ensuring uniformity of layers, controlling doping profiles, and minimizing defects during the fabrication process.
Original Abstract Submitted
a method for fabricating a semiconductor device includes exposing one or more surfaces of a conduction channel of a transistor; overlaying the one or more surfaces with a dielectric interfacial layer; overlaying the dielectric interfacial layer with a blocking layer; performing a first annealing process to densify the dielectric interfacial layer, overlaying the blocking layer with a first high-k dielectric layer; forming one or more threshold voltage modulation layers over the first high-k dielectric layer; performing a second annealing process to adjust a doping profile of the first high-k dielectric layer; and overlaying the first high-k dielectric layer with a second high-k dielectric layer.
