Taiwan semiconductor manufacturing company, ltd. (20240379792). THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSION BARRIER LAYER simplified abstract
Contents
THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSION BARRIER LAYER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Eugene I-Chun Chen of Taipei (TW)
Chia-Shiung Tsai of Hsinchu (TW)
Chen-Hao Chiang of Jhongli City (TW)
THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSION BARRIER LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379792 titled 'THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSION BARRIER LAYER
The method described in the abstract involves forming a semiconductor device by layering different materials over a substrate, attaching it to a carrier, and then removing the substrate to form interconnect structures on both sides of the device.
- Formation of an etch stop layer over a substrate
- Creation of a first diffusion barrier layer over the etch stop layer
- Deposition of a semiconductor device layer containing a transistor over the first diffusion barrier layer
- Building a first interconnect structure on the front side of the semiconductor device layer, connected to the transistor
- Attaching the first interconnect structure to a carrier
- Removing the substrate, etch stop layer, and first diffusion barrier layer
- Forming a second interconnect structure on the backside of the semiconductor device layer
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit production
Problems Solved: - Efficient formation of semiconductor devices - Improved interconnect structure connectivity - Simplified manufacturing process
Benefits: - Enhanced device performance - Increased reliability - Cost-effective production
Commercial Applications: Title: Semiconductor Device Manufacturing Process This technology can be utilized in the production of various semiconductor devices, such as microprocessors, memory chips, and sensors, impacting the electronics market significantly.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, interconnect structures, and substrate removal techniques to gain a deeper understanding of the existing technology landscape.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques, interconnect structure design, and substrate removal methods to enhance the efficiency and performance of semiconductor devices.
Questions about Semiconductor Device Manufacturing: 1. How does the removal of the substrate impact the overall performance of the semiconductor device? 2. What are the key considerations when choosing materials for the diffusion barrier layer in semiconductor device manufacturing?
Original Abstract Submitted
a method of forming a semiconductor device includes: forming an etch stop layer over a substrate; forming a first diffusion barrier layer over the etch stop layer; forming a semiconductor device layer over the first diffusion barrier layer, the semiconductor device layer including a transistor; forming a first interconnect structure over the semiconductor device layer at a front side of the semiconductor device layer, the first interconnect structure electrically coupled to the transistor; attaching the first interconnect structure to a carrier; removing the substrate, the etch stop layer, and the first diffusion barrier layer after the attaching; and forming a second interconnect structure at a backside of the semiconductor device layer after the removing.
