Taiwan semiconductor manufacturing company, ltd. (20240379790). SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Bo-Wen Hsieh of Miaoli County (TW)
Wen-Jia Hsieh of Changhua County (TW)
Yi-Chun Lo of Hsinchu County (TW)
Mi-Hua Lin of Hsinchu County (TW)
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379790 titled 'SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation: The semiconductor structure described in the patent application includes a unique gate stack structure with a gate electrode structure and a first conductive layer. The gate electrode structure has two portions, with the first portion located over the second portion, and the top surface of the first portion is wider than the bottom surface of the second portion.
- The semiconductor structure features a gate stack structure with a gate electrode structure and a first conductive layer.
- The gate electrode structure consists of two portions, with the first portion positioned over the second portion.
- The top surface of the first portion is wider than the bottom surface of the second portion.
Potential Applications: 1. Advanced semiconductor devices. 2. High-performance electronic components. 3. Integrated circuits.
Problems Solved: 1. Enhancing the performance of semiconductor structures. 2. Improving the efficiency of electronic devices. 3. Increasing the functionality of integrated circuits.
Benefits: 1. Improved performance and efficiency. 2. Enhanced functionality. 3. Potential for smaller and more powerful electronic devices.
Commercial Applications: Title: Advanced Semiconductor Structures for High-Performance Electronics This technology could be utilized in the development of cutting-edge electronic devices, leading to faster and more efficient products. The market implications include increased demand for advanced semiconductor components in various industries such as telecommunications, computing, and consumer electronics.
Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents and publications in the field of semiconductor structures, gate stack structures, and integrated circuits.
Frequently Updated Research: Researchers in the field of semiconductor technology may find relevant and up-to-date information on advancements in gate stack structures, semiconductor materials, and electronic device performance.
Questions about Semiconductor Structures: 1. What are the potential implications of this semiconductor structure in the field of electronics? 2. How does the unique gate stack structure described in the patent application contribute to the performance of electronic devices?
Original Abstract Submitted
a semiconductor structure and a method for forming the same are provided. the semiconductor structure includes a gate stack structure formed over a substrate. the gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. in addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
