Taiwan semiconductor manufacturing company, ltd. (20240379789). TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE simplified abstract

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chen-Liang Chu of Hsin-Chu City (TW)

Chien-Chih Chou of New Taipei City (TW)

Chih-Chang Cheng of Hsinchu City (TW)

Yi-Huan Chen of Hsin Chu City (TW)

Kong-Beng Thei of Pao-Shan Village (TW)

Ming-Ta Lei of Hsin-Chu City (TW)

Ruey-Hsin Liu of Hsin-Chu (TW)

Ta-Yuan Kung of New Taipei City (TW)

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379789 titled 'TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

Simplified Explanation

The patent application describes a method to create a transistor device with a recessed gate structure. The gate structure separates different regions of the device and isolation structures, with source/drain regions formed on either side.

• A gate structure is formed over the device region and isolation structure.
• Recess regions are created on either side of the device region.
• Source/drain regions are formed on opposite sides of the gate structure.
• Sidewall spacers are added along the gate structure's sidewalls.
• A resistive protection layer is formed on the sidewall spacer, covering the recess regions.

Key Features and Innovation

• Formation of a transistor device with a recessed gate structure.
• Separation of device regions and isolation structures.
• Creation of source/drain regions on either side of the gate structure.
• Use of sidewall spacers for protection.
• Integration of a resistive protection layer.

Potential Applications

This technology can be applied in the semiconductor industry for the production of advanced transistor devices with improved performance and reliability.

Problems Solved

This method addresses the need for precise control and protection of different regions within a transistor device, enhancing its overall functionality and durability.

Benefits

• Enhanced performance of transistor devices.
• Improved reliability and longevity.
• Better control over device regions.
• Increased efficiency in semiconductor manufacturing processes.

Commercial Applications

Title: Advanced Transistor Devices with Recessed Gate Structures This technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices, leading to advancements in various fields such as computing, telecommunications, and consumer electronics.

Prior Art

Readers can explore prior art related to transistor device fabrication methods, gate structures, and semiconductor manufacturing processes to gain a deeper understanding of the technological advancements in this field.

Frequently Updated Research

Stay informed about the latest developments in transistor device fabrication, gate structure design, and semiconductor materials research to keep up with the evolving trends in the industry.

Questions about Transistor Devices with Recessed Gate Structures

What are the advantages of using a recessed gate structure in transistor devices?

A recessed gate structure allows for better control over device regions, improving performance and reliability.

How does the resistive protection layer enhance the functionality of the transistor device?

The resistive protection layer provides additional protection to the device, ensuring its longevity and durability.

Original Abstract Submitted

a method to form a transistor device with a recessed gate structure is provided. in one embodiment, a gate structure is formed overlying a device region and an isolation structure. the gate structure separates a device doping well along a first direction with a pair of recess regions disposed on opposite sides of the device region in a second direction perpendicular to the first direction. a pair of source/drain regions in is formed the device region on opposite sides of the gate structure. a sidewall spacer is formed extending along sidewalls of the gate structure, where a top surface of the sidewall spacer is substantially flush with the top surface of the gate structure. a resistive protection layer is then formed on the sidewall spacer and covering the pair of recess regions.