Taiwan semiconductor manufacturing company, ltd. (20240379788). THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE simplified abstract

THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yi-Huan Chen of Hsin Chu City (TW)

Kong-Beng Thei of Pao-Shan Village (TW)

Chien-Chih Chou of New Taipei City (TW)

Alexander Kalnitsky of San Francisco CA (US)

Szu-Hsien Liu of Zhubei City (TW)

Huan-Chih Yuan of Zhubei City (TW)

THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379788 titled 'THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE

The semiconductor device described in the abstract includes a well region with a substrate, source and drain regions arranged within the substrate, and a gate electrode over the well region.

• The gate electrode has a bottom surface below the substrate's topmost surface and extends between the source and drain regions.
• A trench isolation structure surrounds the source region, drain region, and gate electrode.
• A gate dielectric structure separates the gate electrode from the well region, source region, drain region, and trench isolation structure.
• The gate electrode has a central portion and a corner portion, with the corner portion being thicker than the central portion.

• • Key Features and Innovation:**
• Integration of source, drain, and gate regions within the substrate.
• Use of trench isolation structure for enhanced device performance.
• Gate electrode design with varying thickness for improved functionality.

• • Potential Applications:**

This technology can be applied in the manufacturing of high-performance semiconductor devices for various electronic applications.

• • Problems Solved:**

This technology addresses the need for efficient and reliable semiconductor devices with optimized performance.

• • Benefits:**
• Enhanced device performance and efficiency.
• Improved reliability and functionality of semiconductor devices.
• Potential for advanced electronic applications.

• • Commercial Applications:**

The technology can be utilized in the production of advanced electronic devices such as smartphones, tablets, and computers, enhancing their performance and functionality.

• • Prior Art:**

Researchers can explore prior patents related to semiconductor device design, gate electrode structures, and trench isolation techniques to understand the evolution of this technology.

• • Frequently Updated Research:**

Ongoing research in semiconductor device fabrication, materials science, and nanotechnology may provide further insights into optimizing the performance of devices using similar design principles.

• • Questions about Semiconductor Device Technology:**

1. How does the thickness variation in the gate electrode impact the overall performance of the semiconductor device? 2. What are the potential challenges in scaling up this technology for mass production in the semiconductor industry?

Original Abstract Submitted

in some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. a source region and a drain region are arranged within the substrate on opposite sides of the well region. a gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. a trench isolation structure surrounds the source region, the drain region, and the gate electrode. a gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. the gate electrode structure has a central portion and a corner portion. the central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness.