Taiwan semiconductor manufacturing company, ltd. (20240379783). DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE simplified abstract

DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Huan-Chieh Su of Tianzhong Township (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379783 titled 'DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE

The abstract of the patent application describes a method for forming a semiconductor transistor device, involving the creation of various structures such as a channel structure, gate structure, source/drain epitaxial structures, gate contact, and back-side source/drain contact.

• The channel structure is formed by stacking semiconductor layers.
• The gate structure wraps around the channel structure.
• The first and second source/drain epitaxial structures are located at opposite ends of the channel structure.
• The gate contact is placed on the gate structure.
• The back-side source/drain contact is positioned under the first source/drain epitaxial structure.
• The second source/drain epitaxial structure has a concave bottom surface.

Potential Applications: - This technology can be used in the manufacturing of semiconductor transistor devices for various electronic applications.

Problems Solved: - Provides a method for efficiently forming semiconductor transistor devices with specific structures in place.

Benefits: - Enables the creation of high-performance semiconductor transistor devices with precise configurations.

Commercial Applications: - This technology can be applied in the production of advanced electronic devices such as smartphones, computers, and other consumer electronics.

Questions about the technology: 1. How does the formation of the channel structure contribute to the overall performance of the semiconductor transistor device? 2. What advantages does the concave bottom surface of the second source/drain epitaxial structure offer in terms of device functionality?

Original Abstract Submitted

a method for forming a semiconductor transistor device includes forming a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. the channel structure is formed by forming a stack of semiconductor layers. the gate structure is formed wrapping around the channel structure. the first source/drain epitaxial structure and the second source/drain epitaxial structure are formed on opposite endings of the channel structure. the gate contact is formed on the gate structure. the back-side source/drain contact is formed under the first source/drain epitaxial structure. the second source/drain epitaxial structure is formed to have a concave bottom surface.