Taiwan semiconductor manufacturing company, ltd. (20240379782). GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL AND BACKSIDE POWER RAIL simplified abstract

GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL AND BACKSIDE POWER RAIL

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chung-Wei Hsu of Hsinchu County (TW)

Lung-Kun Chu of New Taipei City (TW)

Mao-Lin Huang of Hsinchu City (TW)

Jia-Ni Yu of New Taipei City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chih-Hao Wang of Hsinchu County (TW)

GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL AND BACKSIDE POWER RAIL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379782 titled 'GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL AND BACKSIDE POWER RAIL

The semiconductor device described in the abstract includes a unique structure with multiple channel layers stacked over a first interconnect structure. The bottommost channel layer is thinner than the rest, and each channel layer is wrapped by a gate stack except for the bottommost one. Additionally, there is a source/drain feature adjacent to the channel layers, a first conductive via connecting the interconnect structure to the source/drain feature, and a dielectric feature under the bottommost channel layer directly contacting the first conductive via.

• Multiple channel layers stacked over a first interconnect structure
• Bottommost channel layer is thinner than the rest
• Gate stack wrapping around each channel layer except the bottommost one
• Source/drain feature adjoining the channel layers
• First conductive via connecting the interconnect structure to the source/drain feature
• Dielectric feature under the bottommost channel layer directly contacting the first conductive via

Potential Applications: - Advanced semiconductor devices - Integrated circuits - Electronics industry

Problems Solved: - Enhanced performance of semiconductor devices - Improved efficiency in electronic devices

Benefits: - Increased functionality - Higher performance capabilities - Improved reliability

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in the development of cutting-edge electronic devices, leading to improved performance and efficiency in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the unique structure of the semiconductor device contribute to its performance? 2. What are the potential implications of using this technology in the electronics industry?

Original Abstract Submitted

a semiconductor device includes a first interconnect structure and multiple channel layers stacked over the first interconnect structure. a bottommost one of the multiple channel layers is thinner than rest of the multiple channel layers. the semiconductor device further includes a gate stack wrapping around each of the channel layers except a bottommost one of the channel layers; a source/drain feature adjoining the channel layers; a first conductive via connecting the first interconnect structure to a bottom of the source/drain feature; and a dielectric feature under the bottommost one of the channel layers and directly contacting the first conductive via.