Taiwan semiconductor manufacturing company, ltd. (20240379781). Backside Source/Drain Contacts and Methods of Forming the Same simplified abstract

Backside Source/Drain Contacts and Methods of Forming the Same

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei Hao Lu of Taoyuan (TW)

Li-Li Su of Chubei (TW)

Chien-I Kuo of Taibao (TW)

Yee-Chia Yeo of Hsinchu (TW)

Wei-Yang Lee of Taipei (TW)

Yu-Xuan Huang of Hsinchu (TW)

Ching-Wei Tsai of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

Backside Source/Drain Contacts and Methods of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379781 titled 'Backside Source/Drain Contacts and Methods of Forming the Same

Simplified Explanation: The semiconductor device described in the patent application includes a device layer with a channel region, a gate stack, and an epitaxial source/drain region. It also features front-side and backside interconnect structures for electrical connections.

• The device layer contains a channel region, a gate stack, and an epitaxial source/drain region.
• Front-side interconnect structure is present on one side of the device layer.
• Backside interconnect structure, including a backside source/drain contact, is on the opposite side of the device layer.
• The epitaxial source/drain region extends through an insulating fin in the device layer.
• The backside source/drain contact is electrically connected to the epitaxial source/drain region.

Potential Applications: This technology can be used in various semiconductor devices, such as transistors, integrated circuits, and other electronic components requiring efficient electrical connections.

Problems Solved: The semiconductor device addresses the need for reliable and effective electrical connections in complex electronic systems, improving overall performance and functionality.

Benefits: - Enhanced electrical connectivity - Improved device performance - Increased efficiency in electronic systems

Commercial Applications: The technology can be applied in the manufacturing of advanced electronic devices, leading to improved product quality, performance, and reliability in various industries such as telecommunications, computing, and consumer electronics.

Questions about the Technology: 1. How does the epitaxial source/drain region contribute to the overall functionality of the semiconductor device? 2. What are the specific advantages of having front-side and backside interconnect structures in the device layer?

Original Abstract Submitted

a semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. the semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. the backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.