Taiwan semiconductor manufacturing company, ltd. (20240379777). NFET with Aluminum-Free Work-Function Layer and Method Forming Same simplified abstract
Contents
NFET with Aluminum-Free Work-Function Layer and Method Forming Same
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huang-Lin Chao of Hillsboro OR (US)
NFET with Aluminum-Free Work-Function Layer and Method Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379777 titled 'NFET with Aluminum-Free Work-Function Layer and Method Forming Same
The method described in the abstract involves the formation of a gate stack in a semiconductor device through several steps, including the deposition of a metal-containing layer and a silicon-containing layer to act as a work-function layer.
- Forming a dummy gate stack over a semiconductor region
- Forming a source/drain region on a side of the dummy gate stack
- Removing the dummy gate stack to form a trench
- Depositing a gate dielectric layer extending into the trench
- Depositing a metal-containing layer over the gate dielectric layer
- Depositing a silicon-containing layer on the metal-containing layer
- Performing a planarization process to remove excess portions and form a gate stack
Potential Applications: - Advanced semiconductor devices - High-performance transistors - Integrated circuits
Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of transistors - Enabling the fabrication of complex integrated circuits
Benefits: - Increased device performance - Enhanced functionality - Improved manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing This technology could be used in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the formation of the gate stack impact the overall performance of the semiconductor device? 2. What are the specific advantages of using a metal-containing layer and a silicon-containing layer as a work-function layer in the gate stack?
Original Abstract Submitted
a method includes forming a dummy gate stack over a semiconductor region, forming a source/drain region on a side of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, depositing a metal-containing layer over the gate dielectric layer, and depositing a silicon-containing layer on the metal-containing layer. the metal-containing layer and the silicon-containing layer in combination act as a work-function layer. a planarization process is performed to remove excess portions of the silicon-containing layer, the metal-containing layer, and the gate dielectric layer, with remaining portions of the silicon-containing layer, the metal-containing layer, and the gate dielectric layer forming a gate stack.
