Taiwan semiconductor manufacturing company, ltd. (20240379776). SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD simplified abstract
Contents
SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ya-Huei Li of Tainan City (TW)
Da-Yuan Lee of Jhubei City (TW)
Ching-Hwanq Su of Tainan City (TW)
SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379776 titled 'SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD
The method described in the abstract involves a series of steps to modify the properties of a gate dielectric in a semiconductor device.
- Forming a gate dielectric on a semiconductor region.
- Creating a barrier layer over the gate dielectric.
- Adding a work function tuning layer on top of the barrier layer.
- Doping a doping element into the work function tuning layer.
- Removing a portion of the work function tuning layer.
- Thinning the barrier layer.
- Forming a work function layer over the barrier layer.
Potential Applications: - This technology can be applied in the semiconductor industry for enhancing the performance of transistors. - It can be used in the development of advanced electronic devices with improved efficiency.
Problems Solved: - This method addresses the need for precise control over the properties of gate dielectrics in semiconductor devices. - It provides a solution for tuning the work function of materials used in electronic components.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced control over the electrical properties of gate dielectrics. - Potential for increased efficiency and reliability in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Process This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also have applications in the automotive industry for developing advanced vehicle systems.
Questions about the technology: 1. How does this method contribute to the overall efficiency of semiconductor devices? 2. What are the potential challenges in implementing this technology on a large scale?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further improve the performance of semiconductor devices. Stay updated on the latest advancements in gate dielectric engineering for cutting-edge electronic applications.
Original Abstract Submitted
a method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.
