Taiwan semiconductor manufacturing company, ltd. (20240379774). METHOD OF FORMING CONTACT STRUCTURES simplified abstract
Contents
METHOD OF FORMING CONTACT STRUCTURES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
METHOD OF FORMING CONTACT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379774 titled 'METHOD OF FORMING CONTACT STRUCTURES
The method described in the abstract involves processing a workpiece with multiple gate structures and source/drain contacts to improve device performance.
- Receiving a workpiece with first and second gate structures, source/drain contacts, an etch stop layer, and dielectric layers.
- Creating a butted contact opening to expose the first gate structure and source/drain contact.
- Depositing a second dielectric layer and forming a source/drain contact via opening through the layers.
- Enhancing device functionality by optimizing contact formation and dielectric layer deposition.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Advanced electronic devices
Problems Solved: - Improving contact formation in complex device structures - Enhancing device performance and reliability
Benefits: - Increased efficiency in semiconductor processing - Enhanced device functionality and performance
Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Improved Device Performance Description: This technology can be applied in the production of high-performance electronic devices, leading to better market competitiveness and product quality.
Questions about the technology: 1. How does this method improve the performance of semiconductor devices? 2. What are the key advantages of using a butted contact opening in device fabrication processes?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques to further enhance device performance and functionality.
Original Abstract Submitted
a method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (esl) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the esl. the method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the esl layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.
