Taiwan semiconductor manufacturing company, ltd. (20240379773). METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION simplified abstract

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shahaji B. More of Hsinchu (TW)

Chandrashekhar Prakash Savant of Hsinchu (TW)

METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379773 titled 'METHOD AND STRUCTURE FOR METAL GATE BOUNDARY ISOLATION

Simplified Explanation:

The semiconductor structure in the patent application consists of two transistors with different gate metal layers, separated by a barrier with low permeability for aluminum.

• The semiconductor structure includes two transistors with different gate metal layers.
• A barrier with low permeability for aluminum is placed horizontally between the gate metal layers.
• One of the gate metal layers contains aluminum.
• The bottom surface of the first gate metal layer directly rests on the top surface of the barrier.

Key Features and Innovation:

• Use of different materials for gate metal layers in adjacent transistors.
• Incorporation of a barrier with low permeability for aluminum to prevent diffusion.
• Direct contact between the gate metal layer and the barrier for improved performance.

Potential Applications:

This technology could be applied in the semiconductor industry for advanced transistor design and fabrication processes.

Problems Solved:

This technology addresses issues related to material diffusion and performance degradation in semiconductor structures with adjacent transistors.

Benefits:

• Enhanced performance and reliability of semiconductor structures.
• Improved control over material diffusion in transistor components.

Commercial Applications:

Potential commercial applications include the production of high-performance electronic devices and integrated circuits.

Questions about Semiconductor Structures with Different Gate Metal Layers:

1. How does the use of different materials for gate metal layers impact the performance of the transistors? 2. What are the advantages of incorporating a barrier with low permeability for aluminum in semiconductor structures?

Original Abstract Submitted

a semiconductor structure includes a first transistor adjacent a second transistor. the first transistor includes a first gate metal layer over a gate dielectric layer, and the second transistor includes a second gate metal layer over the gate dielectric layer. the first and the second gate metal layers include different materials. the semiconductor structure further includes a first barrier disposed horizontally between the first gate metal layer and the second gate metal layer. one of the first and the second gate metal layers includes aluminum, and the first barrier has low permeability for aluminum. a bottom surface of the first gate metal layer is directly on a top surface of the first barrier.