Taiwan semiconductor manufacturing company, ltd. (20240379772). SELF-ALIGNING BACKSIDE CONTACT PROCESS AND DEVICES THEREOF simplified abstract
Contents
SELF-ALIGNING BACKSIDE CONTACT PROCESS AND DEVICES THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Yang Lee of Taipei City (TW)
SELF-ALIGNING BACKSIDE CONTACT PROCESS AND DEVICES THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379772 titled 'SELF-ALIGNING BACKSIDE CONTACT PROCESS AND DEVICES THEREOF
The abstract describes a method of forming a semiconductor by creating a source/drain feature next to a semiconductor layer stack on a substrate. A dummy fin is formed next to the source/drain feature and the semiconductor layer stack. An etching process is then performed from the backside of the substrate to remove part of the dummy fin next to the source/drain feature, creating a trench in the dummy fin. A dielectric layer is formed in the trench, and part of the dummy fin is replaced with a source/drain contact.
- Formation of a source/drain feature adjacent to a semiconductor layer stack on a substrate
- Creation of a dummy fin next to the source/drain feature and semiconductor layer stack
- Etching process to remove part of the dummy fin and form a trench
- Formation of a dielectric layer in the trench
- Replacement of part of the dummy fin with a source/drain contact
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient formation of source/drain features in semiconductors - Improved contact between source/drain features and semiconductor layer stack
Benefits: - Enhanced semiconductor performance - Increased reliability of integrated circuits - Cost-effective manufacturing process
Commercial Applications: Title: Advanced Semiconductor Manufacturing Method This technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit the automotive industry for advanced driver assistance systems and autonomous vehicles.
Questions about the technology: 1. How does this method improve the efficiency of semiconductor manufacturing? 2. What are the potential cost savings associated with implementing this innovation?
Original Abstract Submitted
a method of forming a semiconductor including forming a source/drain feature adjacent to a semiconductor layer stack disposed over a substrate. the method further includes forming a dummy fin adjacent to the source/drain feature and adjacent to the semiconductor layer stack. the method further includes performing an etching process from a backside of the substrate to remove a first portion of the dummy fin adjacent to the source/drain feature, thereby forming a first trench in the dummy fin, where the first trench extends from the dummy fin to the source/drain feature. the method further includes forming a first dielectric layer in the first trench and replacing a second portion of the dummy fin with a source/drain contact.
