Taiwan semiconductor manufacturing company, ltd. (20240379771). METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME simplified abstract

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METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Wen Tseng of Hsinchu (TW)

Po-Wei Liu of Hsinchu (TW)

Hung-Ling Shih of Hsinchu (TW)

Tsung-Yu Yang of Hsinchu (TW)

Tsung-Hua Yang of Hsinchu (TW)

Yu-Chun Chang of Hsinchu (TW)

METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379771 titled 'METHOD FOR ELIMINATING DIVOT FORMATION AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

The method described in the patent application aims to prevent divot formation by utilizing specific layers and etching techniques.

  • An isolation layer is formed.
  • A conduction layer is formed with an upper inclined boundary that overlaps with the isolation layer.
  • The isolation layer is etched back.
  • The conduction layer is etched back after the isolation layer, ensuring the top surface of the conduction layer is lower than the top surface of the isolation layer.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Integrated circuit fabrication

Problems Solved: - Preventing divot formation in thin film structures - Improving the reliability and performance of electronic devices

Benefits: - Enhanced product quality - Increased manufacturing efficiency - Reduced maintenance costs

Commercial Applications: Title: Advanced Thin Film Technology for Semiconductor Manufacturing This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and automotive electronics, leading to improved performance and durability in the market.

Questions about the technology: 1. How does the method described in the patent application differ from traditional divot prevention techniques?

  - The method involves specific layer formations and etching sequences to prevent divot formation, unlike conventional methods.

2. What are the potential cost savings associated with implementing this technology in semiconductor manufacturing?

  - The technology can lead to reduced maintenance costs and improved product quality, resulting in long-term cost savings for manufacturers.


Original Abstract Submitted

a method for eliminating divot formation includes forming an isolation layer; forming a conduction layer which has an upper inclined boundary with the isolation layer such that the conduction layer has a portion located above a portion of the isolation layer at the upper inclined boundary; etching back the isolation layer; and etching back the conduction layer after etching back the isolation layer such that a top surface of the etched conduction layer is located at a level lower than a top surface of the etched isolation layer.