Taiwan semiconductor manufacturing company, ltd. (20240379763). Fin-Like Field Effect Transistors Having High Mobility Strained Channels and Methods of Fabrication Thereof simplified abstract

Fin-Like Field Effect Transistors Having High Mobility Strained Channels and Methods of Fabrication Thereof

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

Fin-Like Field Effect Transistors Having High Mobility Strained Channels and Methods of Fabrication Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379763 titled 'Fin-Like Field Effect Transistors Having High Mobility Strained Channels and Methods of Fabrication Thereof

Simplified Explanation: This patent application discloses the fabrication of fin-like field effect transistors (FinFETs) with high mobility strained channels. The method involves forming silicon fins in different device regions, epitaxial source/drain features over the fins, and a gate structure over the channel regions.

• High mobility strained channels in FinFETs
• Formation of silicon fins in different device regions
• Epitaxial source/drain features over the fins
• Gate structure formation over the channel regions
• Masking layer covering the second channel region during the gate replacement process

Potential Applications:

• Semiconductor industry for high-performance devices
• Mobile devices
• Internet of Things (IoT) devices
• Data centers

Problems Solved:

• Enhancing transistor performance
• Improving device speed and efficiency
• Increasing overall device capabilities

Benefits:

• Higher transistor mobility
• Improved device performance
• Enhanced speed and efficiency
• Increased device capabilities

Commercial Applications: Potential commercial applications include the production of high-performance semiconductor devices for various industries such as mobile devices, IoT, and data centers.

Prior Art: Readers can explore prior art related to FinFET technology, strained channels, and semiconductor device fabrication processes.

Frequently Updated Research: Stay updated on the latest research in FinFET technology, strained channels, and semiconductor device fabrication processes for advancements in the field.

Questions about FinFET Technology: 1. What are the key advantages of using strained channels in FinFETs? 2. How does the gate replacement process contribute to the performance of FinFET devices?

Original Abstract Submitted

fin-like field effect transistors (finfets) having high mobility strained channels and methods of fabrication thereof are disclosed herein. an exemplary method includes forming a first silicon fin in a first type finfet device region and a second silicon fin in a second type finfet device region. first epitaxial source/drain features and second epitaxial source/drain features are formed respectively over first source/drain regions of the first silicon fin second source/drain regions of the second silicon fin. a gate replacement process is performed to form a gate structure over a first channel region of the first silicon fin and a second channel region of the second silicon fin. during the gate replacement process, a masking layer covers the second channel region of the second silicon fin when a silicon germanium channel capping layer is formed over the first channel region of the first silicon fin.