Taiwan semiconductor manufacturing company, ltd. (20240379762). EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD simplified abstract

EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

I-Wen Wu of Hsinchu City (TW)

Chen-Ming Lee of Taoyuan County (TW)

Fu-Kai Yang of Hsinchu City (TW)

Mei-Yun Wang of Hsin-Chu (TW)

Chun-An Lin of Tainan City (TW)

Wei-Yuan Lu of Taipei City (TW)

Guan-Ren Wang of Hsinchu (TW)

Peng Wang of Hsinchu (TW)

EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379762 titled 'EPITAXIAL SOURCE/DRAIN STRUCTURE AND METHOD

The method of semiconductor fabrication involves creating a semiconductor structure with multiple fins above the substrate, each with different epitaxial source/drain features.

• The method includes forming an n-type epitaxial source/drain feature on the first and second fins, and a p-type epitaxial source/drain feature on the third and fourth fins.
• A selective etch process is then performed to remove upper portions of the epitaxial source/drain features, with more material removed from the n-type feature than the p-type feature.

Potential Applications: - This method can be used in the production of advanced semiconductor devices with improved performance and efficiency. - It can be applied in the manufacturing of high-speed transistors for use in various electronic devices.

Problems Solved: - This method addresses the need for precise control over the doping levels and dimensions of source/drain features in semiconductor devices. - It helps in achieving better electrical characteristics and reducing parasitic resistance in the devices.

Benefits: - Enhanced device performance and reliability. - Increased efficiency in semiconductor fabrication processes. - Potential cost savings in the production of advanced electronic components.

Commercial Applications: Title: Advanced Semiconductor Fabrication Method for High-Performance Devices This technology can be utilized in the production of high-speed transistors, integrated circuits, and other semiconductor devices for applications in telecommunications, computing, and consumer electronics markets.

Questions about Semiconductor Fabrication: 1. How does this method improve the performance of semiconductor devices?

  - This method enhances device performance by allowing for precise control over the doping levels and dimensions of the source/drain features, resulting in better electrical characteristics and reduced parasitic resistance.

2. What are the potential cost savings associated with using this fabrication method?

  - The selective etch process used in this method can lead to more efficient semiconductor fabrication processes, potentially resulting in cost savings in the production of advanced electronic components.

Original Abstract Submitted

a method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. the method further includes forming an n-type epitaxial source/drain (s/d) feature on the first and second fins, forming a p-type epitaxial s/d feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial s/d feature and the p-type epitaxial s/d feature such that more is removed from the n-type epitaxial s/d feature than the p-type epitaxial s/d feature.